IRHLNA73064 IRF [International Rectifier], IRHLNA73064 Datasheet - Page 3

• Manufacturer Part Number: IRHLNA73064
• Description: RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
• Manufacturer: IRF [International Rectifier]

For footnotes refer to the last page
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHLNA77064, IRHLNA73064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
www.irf.com
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 2. Single Event Effect Safe Operating Area
Radiation Characteristics
Ion
Au
Br
BV
V
I
I
I
R
R
V
GSS
GSS
DSS
I
GS(th)
DS(on)
DS(on)
SD
DSS
(MeV/(mg/cm
LET
Diode Forward Voltage„
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
37
60
84
Resistance (SMD-2)
Parameter
2
))
Energy Range
(MeV)
305
370
390
80
60
40
20
0
Fig a. Single Event Effect, Safe Operating Area
0
(µm)
-1
39
34
30
„
-2
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-3
0V
60
60
60
-4
VGS
Upto 300K Rads (Si)
-3V
60
60
60
-5
Min
1.0
—
—
60
—
—
—
—
-6
-4V
50
60
60
-7
Max
0.01
0.012
-100
1.2
2.0
100
—
-8
10
-5V
45
60
50
-9
1
-10
Units
VDS (V)
nA
µA
Ω
Ω
V
V
-6V
40
30
25
-7V
30
20
Br
I
Au
-
V
Test Conditions
V
V
V
GS
V
V
GS
GS
GS
GS
DS
= V
ÄÅ
= 0V, I
V
V
= 48V, V
-8V
= 4.5V, I
= 0V, I
= 4.5V, I
25
10
GS
GS
IRHLNA77064
DS
= -10V
, I
= 10V
D
D
= 250µA
D
GS
= 250µA
D
D
-9V
20
10
= 56A
-
= 56A
= 56A
=0V
ˆ
-10V
15
-
-
3