IRHNJ3130 IRF [International Rectifier], IRHNJ3130 Datasheet
IRHNJ3130
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IRHNJ3130 Summary of contents
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... RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) International Rectifier’s RAD-Hard technology provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications ...
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IRHNJ7130 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain ...
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... On-State Resistance (SMD-0.5) V Diode Forward Voltage SD 1. Part numbers IRHNJ7130, IRHNJ3130, IRHNJ4130 2. Part number IRHNJ8130 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...
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IRHNJ7130 100 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 10 5.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...
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Pre-Irradiation 2000 1MHz iss rss oss ds gd 1500 C iss 1000 500 C oss C rss ...
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IRHNJ7130 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL ...
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Pre-Irradiation 12V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...
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IRHNJ7130 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature 25V, starting 25°C, L= 1.4mH, Peak 14.4A 12V I SD 14.4A, di/dt 395A 100V, ...