MRF6P21190HR6_06 FREESCALE [Freescale Semiconductor, Inc], MRF6P21190HR6_06 Datasheet - Page 8

• Manufacturer Part Number: MRF6P21190HR6_06
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

8
MRF6P21190HR6
Figure 15. Series Equivalent Source and Load Impedance
Z
Input
Matching
Network
load
Z
Z
source
load
f = 2200 MHz
2000
2110
2140
2170
2200
MHz
f = 2000 MHz
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to gate, balanced configuration.
from drain to drain, balanced configuration.
f = 2200 MHz
Z
5.63 - j12.88
4.36 - j10.02
source
4.56 - j8.49
5.11 - j7.41
5.42 - j6.67
+
−
Z
DQ
source
Ω
= 1900 mA, P
Device
Under
Test
Z
f = 2000 MHz
source
out
Z
o
= 44 W Avg.
3.43 - j10.06
= 25 Ω
3.22 - j7.13
3.39 - j6.07
3.76 - j5.45
3.69 - j5.16
Z
load
−
+
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data