MRF7P20040HR3_10 FREESCALE [Freescale Semiconductor, Inc], MRF7P20040HR3_10 Datasheet - Page 5

• Manufacturer Part Number: MRF7P20040HR3_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
18.5
17.5
16.5
15.5
18
17
16
Figure 4. Output Peak- -to- -Average Ratio Compression (PARC)
18.5
17.5
16.5
15.5
14.5
13.5
--10
--20
--30
--40
--50
--60
18
17
16
15
--1
--2
--3
--4
--5
14
1
0
1880
1
3
Broadband Performance @ P
ACPR
Figure 5. Intermodulation Distortion Products
--1 dB = 5.48 W
V
V
(f1 + f2)/2 = Center Frequency of 2017.5 MHz
Compression (PARC) versus Output Power
V
I
DD
GSB
DQA
DD
Figure 6. Output Peak- -to- -Average Ratio
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
1900
IM7--U
= 32 Vdc, P
= 32 Vdc, P
= 1.5 Vdc, Two--Tone Measurements
= 150 mA, V
V
TYPICAL CHARACTERISTICS
GSB
η
IM5--U
D
V
1920
versus Two- -Tone Spacing
DD
= 1.5 Vdc, f = 2017.5 MHz
6
IM7--L
P
PARC
--2 dB = 7.64 W
= 32 Vdc, I
out
IRL
TWO--TONE SPACING (MHz)
out
out
GSB
= 15 W (PEP), I
, OUTPUT POWER (WATTS)
IM5--L
= 10 W (Avg.)
1940
f, FREQUENCY (MHz)
G
ps
= 1.5 Vdc
DQA
1960
10
= 150 mA
9
IM3--L
IM3--U
DQA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
1980
= 150 mA
out
= 10 Watts Avg.
--3 dB = 10.07 W
2000
12
G
η
ACPR
ps
D
PARC
2020
2040
MRF7P20040HR3 MRF7P20040HSR3
100
15
46
44
42
40
38
--28
--30
--32
--34
--36
--38
48
44
40
36
32
28
24
--26
--28
--30
--32
--34
--36
--38
--14
--16
--18
--20
--22
--24
--1.8
--2
--2.2
--2.4
--2.6
--2.8
5