MRF8S7170N FREESCALE [Freescale Semiconductor, Inc], MRF8S7170N Datasheet - Page 5

• Manufacturer Part Number: MRF8S7170N
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
19.5
18.5
17.5
20
19
18
17
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
20.6
20.2
19.8
19.4
18.6
18.2
17.8
17.4
-10
-20
-30
-40
-50
-60
21
19
17
-1
-2
-3
-4
-5
1
0
710
30
1
Broadband Performance @ P
Figure 3. Intermodulation Distortion Products
V
Single-Carrier W-CDMA
IRL
IM3-U
V
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 748 MHz
DD
Compression (PARC) versus Output Power
-1 dB = 42 W
DD
Figure 4. Output Peak-to-Average Ratio
= 28 Vdc, P
720
IM3-L
= 28 Vdc, P
ACPR
TYPICAL CHARACTERISTICS
50
730
IM5-L
versus Two-T one Spacing
IM5-U
-2 dB = 60 W
V
f = 748 MHz, Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
out
P
out
DD
TWO-T ONE SPACING (MHz)
out
= 50 W (Avg.), I
, OUTPUT POWER (WATTS)
= 160 W (PEP), I
= 28 Vdc, I
f, FREQUENCY (MHz)
740
70
PARC
G
η
ps
D
IM7-L
750
IM7-U
DQ
10
= 1200 mA
DQ
-3 dB = 96 W
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
DQ
= 1200 mA
90
760
out
= 1200 mA
ACPR
= 50 Watts Avg.
770
η
D
110
780
PARC
G
ps
790
130
100
40
38
36
34
32
-35.5
-36
-36.5
-37
-37.5
-38
60
55
50
45
40
35
30
-20
-25
-30
-35
-40
-45
-50
-7
-1 1
-15
-19
-23
-27
MRF8S7170NR3
0
-0.5
-1
-1.5
-2
-2.5
5