k9k1g08q0a Samsung Semiconductor, Inc., k9k1g08q0a Datasheet - Page 42

• Manufacturer Part Number: k9k1g08q0a
• Description: 128m X 8 Bit / 64m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 25). Its value can be
determined by the following guidance.
K9K1G08Q0A
K9K1G08U0A
200n
100n
300n
V
CC
GND
Rp value guidance
Rp(min, 1.8V part) =
Rp(min, 3.3V part) =
Rp(max) is determined by maximum permissible limit of tr
1.7
1K
30
1.7
@ Vcc = 1.8V, Ta = 25
Ibusy
Device
tf
tr
K9K1G16Q0A
K9K1G16U0A
open drain output
60
0.85
1.7
2K
R/B
Rp(ohm)
where I
90
3K
1.7
Rp
V
V
L
0.57
CC
CC
C , C
is the sum of the input currents of all devices tied to the R/B pin.
(Max.) - V
(Max.) - V
ibusy
Figure 25. Rp vs tr ,tf & Rp vs ibusy
L
I
I
1.7
OL
OL
0.43
= 30pF
120
4K
C
+ I
+ I
L
OL
OL
L
L
(Max.)
(Max.)
Ready Vcc
2m
3m
1m
42
=
=
200n
100n
300n
tf
3mA + I
8mA + I
1.85V
1.8V device - V
3.3V device - V
3.2V
VOL
L
L
2.4
1K
100
3.6
@ Vcc = 3.3V, Ta = 25
Ibusy
tf
tr
Busy
OL
OL
: 0.1V, V
: 0.4V, V
1.2
200
2K
3.6
FLASH MEMORY
Rp(ohm)
OH
OH
300
0.8
3K
3.6
: Vcc
: 2.4V
C , C
Preliminary
Q
tr
-0.1V
L
0.6
400
3.6
= 100pF
4K
VOH
2m
3m
1m