JANSF2N7426U IRF [International Rectifier], JANSF2N7426U Datasheet - Page 8

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JANSF2N7426U

Manufacturer Part Number
JANSF2N7426U
Description
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Manufacturer
IRF [International Rectifier]
Datasheet
Footnotes:
IRHNA9260, JANSR2N7426U
Case Outline and Dimensions — SMD-2
V DD =-50V, starting T J = 25°C, L = 1.2mH,
I SD - 29A, di/dt -377A/ s,
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
maximum junction temperature.
Peak I L = -29A, V GS = -12V
V DD
8
Pulse width
Repetitive Rating; Pulse width limited by
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
- 200V, T J
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
300 s; Duty Cycle
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
150°C
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
2%
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
Data and specifications subject to change without notice. 11/00
Total Dose Irradiation with V DS Bias.
-12 volt V GS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
-160 volt V DS applied and V GS = 0 during
Total Dose Irradiation with V GS Bias.
irradiation per MlL-STD-750, method 1019, condition A
Pre-Irradiation
www.irf.com

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