BZT55C36 TEMIC [TEMIC Semiconductors], BZT55C36 Datasheet
BZT55C36
Related parts for BZT55C36
BZT55C36 Summary of contents
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TELEFUNKEN Semiconductors Silicon Epitaxial Planar Z–Diodes Features Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization Absolute Maximum Ratings Parameter Power dissipation R thJA ...
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BZT55C... Type V I for V Znorm ZT ZT BZT55C... 2.4 5 2. 2.7 5 2 3.0 5 2 ...
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TELEFUNKEN Semiconductors Typical Characteristics (T j 600 500 400 300 200 100 120 T – Ambient Temperature ( 9602 amb Figure 1 : Total Power Dissipation vs. Ambient Temperature 1 ...
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BZT55C... 100 80 P =500mW tot T amb – Z-Voltage ( 9604 Z Figure 7 : Z–Current vs. Z–Voltage 1000 I =1mA Z 100 5mA 10mA 10 T ...
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TELEFUNKEN Semiconductors Dimensions in mm technical drawings according to DIN specifications 94 9372 Quadro MELF Glass Case similar to JEDEC DO 213 AA Rev. A1: 12.12.1994 Cathode Identification 0.35 0.35 0.30 0.30 3.7 3.3 BZT55C... 1.5 1.3 5 ...
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BZT55C... OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements and 2. Regularly and continuously improve the performance of our products, processes, distribution ...