RF3300-3 RFMD [RF Micro Devices], RF3300-3 Datasheet

no-image

RF3300-3

Manufacturer Part Number
RF3300-3
Description
3V 1900MHz LINEAR AMPLIFIER MODULE
Manufacturer
RFMD [RF Micro Devices]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF3300-3
Manufacturer:
RFMD
Quantity:
20 000
Part Number:
RF3300-3KE0.4
Quantity:
38
Product Description
The RF3300-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA handheld digital cellular equipment, spread-
spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3300-3 has a digital
control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. This amplifier con-
tains a temperature compensating bias circuit for
improved performance over temperature.
Optimum Technology Matching® Applied
Rev A5 030612
Typical Applications
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
VCC3
VCC1
RF IN
Si BJT
Si Bi-CMOS
InGaP/HBT
GND
GND
1
2
3
4
5
Functional Block Diagram
12
GaAs HBT
SiGe HBT
GaN HEMT
Bias
0
11
Pwr
Det
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
10
9
8
7
6
PDET_OUT
VCC2
RF OUT
GND
GND
• Designed for Compatibility with Qualcomm
3V 1900MHz LINEAR AMPLIFIER MODULE
Chipsets
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 3V Supply with Internal V
• Integrated Power Detector
• 25dB Linear Gain
• 40mA Idle Current (Low Power Mode)
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
RF3300-3
RF3300-3 PCBA Fully Assembled Evaluation Board
7.375 TYP
6.575 TYP
5.875 TYP
5.075 TYP
4.375 TYP
3.575 TYP
2.875 TYP
2.075 TYP
0.925 TYP
0.125 TYP
Package Style: Module (6mmx7.5mm)
6.775
0.000
3V 1900MHz Linear Amplifier Module
Bottom View
Dimensions in mm.
RF3300-3
1
http://www.rfmd.com
Fax (336) 664 0454
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
Tel (336) 664 1233
REF
2-547

Related parts for RF3300-3

RF3300-3 Summary of contents

Page 1

... RF amplifier in dual-mode 3V CDMA handheld digital cellular equipment, spread- spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3300-3 has a digital control line for low power application to reduce the cur- rent drain. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, effi- ciency, and linearity characteristics ...

Page 2

... RF3300-3 Absolute Maximum Ratings Parameter Supply Voltage (RF off) ≤28dBm) Supply Voltage (P OUT Control Voltage (PA_ON) Mode Voltage (V ) MODE Input RF Power Operating Case Temperature Storage Temperature Parameter Min. High Power State (V Low) MODE Frequency Range 1850 Linear Gain Second Harmonic Third Harmonic ...

Page 3

... Typ. Max. 3.2 3.7 4.2 150 180 40 55 0.1 0.1 < 0.5 1.7 2.7 3.6 0 0.5 1.7 2.7 3 1.35 0.6 RF3300-3 Unit Condition o T =25 C AMB =Low MODE mA V =High MODE µA µA µs PA_ON switched from low to high, I within 90% of the final value, P 1dB of the final value. µA PA_ON=Low V V Must not exceed V ...

Page 4

... RF3300-3 Pin Function Description 1 VCC3 Bias circuit and HDET power supply. A low frequency decoupling capacitor (2.2µF) is required. Type GND Ground connection. Connect to the GND_SLUG pin. For best perfor- mance, keep traces physically short and connect immediately to ground plane. Type GND Ground connection ...

Page 5

... These resistors are not needed when the VCC3 is connected to the handset battery. Rev A5 030612 PA_ON VMODE R2 R3 100 kΩ 100 kΩ Pwr Det 2 Bias RF3300 PDET_OUT R1 1 kΩ VCC2 9 C2 2.2 µ OUT 50 Ω µstrip 7 6 2-551 ...

Page 6

... RF3300-3 2-552 Rev A5 030612 ...

Related keywords