DS2101SY10 DYNEX [Dynex Semiconductor], DS2101SY10 Datasheet - Page 4
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DS2101SY10
Manufacturer Part Number
DS2101SY10
Description
Rectifier Diode
Manufacturer
DYNEX [Dynex Semiconductor]
Datasheet
1.DS2101SY10.pdf
(7 pages)
DS2101SY
CHARACTERISTICS
CURVES
V
V
4/7
FM
FM
Symbol
10000
8000
6000
4000
2000
Equation:-
= A + Bln (I
I
V
V
Q
I
RRM
r
RM
FM
TO
T
S
0
Fig.2 Maximum (limit) forward characteristics
0
Measured under pulse conditions
Forward voltage
Peak reverse current
Total stored charge
Peak recovery current
Threshold voltage
Slope resistance
F
) + C.I
Instantaneous forward voltage, V
F
+D. I
0.5
T
F
j
Parameter
= 190˚C
1.0
T
F
j
= 25˚C
-(V)
At 3000A peak, T
At V
I
T
At T
At T
F
1.5
case
= 2000A, dI
vj
RRM
vj
=175˚C, V
= 190˚C
= 190˚C
Where
these values are valid for T
, T
16000
12000
8000
4000
case
0
= 190
0
RR
R
/dt = 3A/ s
Conditions
= 100V
case
o
C
= 25
A = 0.081707
B = 0.100349
C = 5.72 x 10
D = –0.00529
o
4000
Fig.3 Dissipation curves
Mean forward current, I
C
j
–5
= 125˚C for I
8000
www.dynexsemi.com
F(AV)
F
Min.
500A to 16000A
-
-
-
-
-
-
12000
- (A)
0.038
Max.
1600
0.95
0.67
100
90
dc
Half wave
3 phase
6 phase
Units
16000
mA
m
V
A
V
C