DS1112SG55 DYNEX [Dynex Semiconductor], DS1112SG55 Datasheet - Page 3
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DS1112SG55
Manufacturer Part Number
DS1112SG55
Description
Rectifier Diode
Manufacturer
DYNEX [Dynex Semiconductor]
Datasheet
1.DS1112SG55.pdf
(7 pages)
SURGE RATINGS
THERMAL AND MECHANICAL DATA
www.dynexsemi.com
Symbol
Symbol
R
R
I
I
T
th(c-h)
FSM
FSM
T
I
I
th(j-c)
-
2
2
stg
vj
t
t
Surge (non-repetitive) forward current
Surge (non-repetitive) forward current
I
I
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Thermal resistance - junction to case
2
2
t for fusing
t for fusing
Parameter
Parameter
Double side cooled
Single side cooled
Clamping force 12.0kN
with mounting compound
On-state (conducting)
Reverse (blocking)
10ms half sine; T
10ms half sine; T
V
R
= 50% V
Conditions
Conditions
V
R
RRM
= 0
- 1/4 sine
case
case
Anode dc
Cathode dc
Single side
dc
Double side
= 150
= 150
o
o
C
C
Min.
11.5
–55
-
-
-
-
-
-
-
565 x 10
360x 10
Max.
DS1112SG
10.5
8.5
0.008
0.016
0.032
0.064
0.064
Max.
13.5
160
150
175
3
3
Units
Units
o
o
o
o
o
C/W
C/W
C/W
C/W
C/W
A
A
kN
kA
kA
o
o
o
C
C
C
2
2
s
s
3/7