mtv20n50e Freescale Semiconductor, Inc, mtv20n50e Datasheet - Page 6

• Manufacturer Part Number: mtv20n50e
• Description: Tm Data Sheet Tmos E-fet.tm Power Field Effect Transistor D3pak For Surface Mount
• Manufacturer: Freescale Semiconductor, Inc

MTV20N50E
6
100
1.0
0.1
10
0.1
0.001
V GS = 20 V
SINGLE PULSE
T C = 25°C
0.01
1.0
0.1
Figure 12. Maximum Rated Forward Biased
1.0E–05
0.2
0.1
0.05
0.02
D = 0.5
0.01
SINGLE PULSE
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.0
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
100 s
1.0E–04
1 ms
10
10 ms
dc
Figure 15. Diode Reverse Recovery Waveform
I S
100
1.0E–03
Figure 14. Thermal Response
SAFE OPERATING AREA
t p
1000
di/dt
t, TIME (s)
t a
1.0E–02
t rr
t b
I S
2000
1600
1200
P (pk)
800
400
Motorola TMOS Power MOSFET Transistor Device Data
0.25 I S
0
DUTY CYCLE, D = t 1 /t 2
25
Figure 13. Maximum Avalanche Energy versus
t 1
t 2
T J , STARTING JUNCTION TEMPERATURE (°C)
1.0E–01
50
Starting Junction Temperature
TIME
75
R JC (t) = r(t) R JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R JC (t)
1.0E+00
100
125
I D = 20 A
1.0E+01
150