RJK60S5DPE RENESAS [Renesas Technology Corp], RJK60S5DPE Datasheet - Page 3

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RJK60S5DPE

Manufacturer Part Number
RJK60S5DPE
Description
600V - 20A - SJ MOS FET High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
RJK60S5DPE
Main Characteristics
R07DS0639EJ0100 Rev.1.00
Apr 23, 2012
0.01
150
100
Static Drain to Source on State Resistance
0.1
30
25
20
15
10
50
5
0
0
1
0
0
1
Drain to Source Voltage
Ta = 125°C
Pulse Test
Typical Output Characteristics
25
Case Temperature Tc (°C)
vs. Drain Current (Typical)
Channel Dissipation vs.
2
Drain Current
Case Temperature
50
Ta = 125°C
4
75
10
25°C
100
6
I
D
V
Pulse Test
125 150 175
GS
(A)
V
= 10 V
8
DS
(V)
100
10
0.01
100
0.1
Static Drain to Source on State Resistance
0.5
0.4
0.3
0.2
0.1
10
40
30
20
10
1
0
0
−25
0
0
Drain to Source Voltage
Ta = 25°C
Pulse Test
Gate to Source Voltage V
V
V
Pulse Test
Pulse Test
Typical Transfer Characteristics
Typical Output Characteristics
DS
GS
Case Temperature
Ta = 75°C
0
vs. Temperature (Typical)
= 10 V
= 10 V
2
2
25°C
25
4
4
50
I
D
= 20 A
75
6
6
−25°C
10 A
100 125 150
Tc (°C)
V
8
8
5 A
GS
DS
Preliminary
(V)
(V)
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