PSMN5R0-30YL_10 NXP [NXP Semiconductors], PSMN5R0-30YL_10 Datasheet - Page 6

• Manufacturer Part Number: PSMN5R0-30YL_10
• Description: N-channel TrenchMOS logic level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
Table 6.
[1]
PSMN5R0-30YL_3
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Tested to JEDEC standards where applicable.
(A)
I
D
120
100
(A)
80
I
60
40
20
80
60
40
20
D
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
10
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4.5
2
1
T
j
= 150 °C
4
…continued
2
6
V
GS
Conditions
I
I
V
25 °C
S
S
(V) = 3.2
DS
= 25 A; V
= 20 A; dI
3
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= 20 V
8
003aac548
003aac552
V
3
2.8
2.6
2.4
2.2
V
GS
DS
(V)
(V)
GS
10
Rev. 03 — 4 January 2010
S
4
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C; see
Fig 6.
Fig 8.
R
(mΩ)
GS
DSon
(S)
g
80
70
60
50
40
30
10
fs
8
6
4
2
0
= 0 V;
of drain current; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
Figure 17
N-channel TrenchMOS logic level FET
V
GS
10
(V) = 3.2 V
20
PSMN5R0-30YL
Min
-
-
-
20
Typ
0.84
30
21
40
4.5
10
30
© NXP B.V. 2010. All rights reserved.
I
D
003aac550
003aac555
(A)
I
D
Max
1.2
-
-
(A)
60
40
Unit
V
ns
nC
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