AOT9606 AOSMD [Alpha & Omega Semiconductors], AOT9606 Datasheet
AOT9606
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AOT9606 Summary of contents
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... AOT8N60 / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low DS(on) iss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs ...
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AOT8N60/AOTF8N60 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS /∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate ...
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AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10V (Volts) DS Fig 1: On-Region Characteristics 1.6 1.4 V =10V GS 1.2 1.0 0.8 0.6 0 (A) ...
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AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 V =480V (nC) g Figure 7: Gate-Charge Characteristics 100 R 10 DS(ON) limited 1 100µs 0.1 T J(Max) T =25°C ...
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AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D θJC θJC J, =0.45°C/W θJC 1 0.1 Single Pulse 0.01 0.00001 0.0001 Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N60 (Note ...
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AOT1N60/AOTF1N60 + Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs ...