bc858bl3 Infineon Technologies Corporation, bc858bl3 Datasheet - Page 4

• Manufacturer Part Number: bc858bl3
• Description: Ic ? 100 Ma Pnp Silicon Af Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain
I
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
Base-emitter voltage
I
I
1
C
C
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
= 1 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 10 µA, I
= 10 µA, V
= 10 µA, V
= 10 µA, V
= 2 mA, V
= 2 mA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 45 V, I
= 30 V, I
C
E
E
E
CE
CE
CE
CE
B
B
B
B
B
= 0
E
E
CE
CE
CE
CE
= 0 , BC856...
= 0 , BC857..., BC860...
= 0 , BC858..., BC859...
B
B
= 0 , BC856...
= 0 , BC857..., BC860...
= 0 , BC858..., BC859...
= 0.5 mA
= 0.5 mA
= 0
= 0 , T
1)
= 5 V, h
= 5 V, h
= 5 V, h
= 5 V
= 5 mA
= 5 mA
= 5 V, h
= 5 V, h
= 5 V, h
= 5 V
1)
A
= 150 °C
FE
FE
FE
FE
FE
FE
-grp.A
-grp.B
-grp.C
-grp.A
-grp.B
-grp.C
1)
A
= 25°C, unless otherwise specified
1)
4
Symbol
V
V
V
I
h
V
V
V
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
BE(ON)
min.
125
220
420
600
65
45
30
80
50
30
5
-
-
-
-
-
-
-
-
-
-
Values
BC856...-BC860...
140
250
480
180
290
520
250
700
850
650
typ.
75
-
-
-
-
-
-
-
-
-
-
0.015
max.
250
475
800
300
650
750
820
5
2008-04-29
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
-
mV