bfg520w-x-n NXP Semiconductors, bfg520w-x-n Datasheet - Page 3

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bfg520w-x-n

Manufacturer Part Number
bfg520w-x-n
Description
Bfg520w; Bfg520w/x Npn 9 Ghz Wideband Transistors
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CES
EBO
tot
th j-s
NPN 9 GHz wideband transistors
(mW)
P tot
s
s
600
400
200
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MBG248
( C)
o
open emitter
R
open collector
T
s
BE
200
Rev. 04 - 21 November 2007
= 0
85 C; see Fig.2; note 1
CONDITIONS
T
s
85 C; note 1
CONDITIONS
BFG520W; BFG520W/X
65
MIN.
20
15
2.5
70
500
+150
175
VALUE
Product specification
MAX.
180
3 of 15
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W

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