MIC4102_11 MIC [MIC GROUP RECTIFIERS], MIC4102_11 Datasheet - Page 3

• Manufacturer Part Number: MIC4102_11
• Description: 100V Half Bridge MOSFET Driver with Anti-Shoot Through Protection PRELIMINARY SPECIFICATIONS
• Manufacturer: MIC [MIC GROUP RECTIFIERS]

Absolute Maximum Ratings
Supply Voltage (V
Input Voltages (V
Voltage on LO (V
Voltage on HO (V
Voltage on HS (continuous) .............................. -1V to 110V
Voltage on HB ..............................................................118V
Average Current in VDD to HB Diode.......................100mA
Junction Temperature (T
Storage Temperature (T
EDS Rating
Electrical Characteristics
Micrel, Inc.
Supply Current
Input Pins (TTL)
Under Voltage Protection
Boost Strap Diode
November 2006
Symbol
V
V
V
V
I
I
I
V
V
V
I
DDO
I
HBO
V
R
HBS
R
DDR
DDH
DD
HB
HBR
HBH
DH
DL
IH
V
IL
D
I
DD
= V
V
V
Total HB Quiescent Current
Total HB Operating Current
HB to VSS Current, Quiescent
Low Level Input Voltage
Threshold
High Level Input Voltage
Threshold
Input Pull-down Resistance
V
V
HB Rising Threshold
HB Threshold Hysteresis
Low-Current Forward Voltage
Low-Current Forward Voltage
Dynamic Resistance
(3)
HB
DD
DD
DD
DD
..............................................................Note 3
= 12V; V
Quiescent Current
Operating Current
Rising Threshold
Threshold Hysteresis
PWM,
LO
HO
DD
) .............................. -0.3V to V
) ......................V
, V
Parameter
V
SS
HB
LS
s
J
= V
) ..........................-60°C to +150°C
) ..................... -0.3V to V
) ........................–55°C to +150°C
– V
HS
HS
= 0V; No load on LO or HO; T
) ...................... -0.3V to 18V
(4)
HS
(1)
- 0.3V to V
PWM = 0V
f = 500kHz
PWM = 0V
f = 500kHz
V
I
I
I
VDD-HB
VDD-HB
VDD-HB
HS
= V
= 100µA
= 100mA
= 100mA
DD
DD
HB
HB
= 110V
+ 0.3V
+ 0.3V
+ 0.3V
A
Condition
= 25°C; unless noted. Bold values indicate –40°C< T
3
Operating Ratings
Supply Voltage (V
Voltage on HS ................................................... -1V to 100V
Voltage on HS (repetitive transient) .................. -5V to 105V
HS Slew Rate............................................................ 50V/ns
Voltage on HB ...................................V
Junction Temperature (T
Junction Thermal Resistance
and............................................ V
SOIC-8L (θ
JA
)...................................................140°C/W
DD
)........................................ +9V to +16V
Min
100
0.8
6.5
6.0
J
(2)
) ........................ –40°C to +125°C
0.05
Typ
150
200
1.5
1.5
1.5
7.3
0.5
7.0
0.4
0.4
0.7
1.0
25
3
DD
HS
- 1V to V
+ 8V to V
Max
0.55
0.70
450
600
150
200
500
3.5
4.0
2.5
2.2
8.0
8.0
0.8
1.0
1.5
2.0
30
J
3
1
M9999-112806
< +125°C.
MIC4102
DD
HS
Units
+ 100V
mA
mA
kΩ
µA
µA
µA
+ 16V
Ω
V
V
V
V
V
V
V
V