RT1N431C ISAHAYA [Isahaya Electronics Corporation], RT1N431C Datasheet - Page 2

• Manufacturer Part Number: RT1N431C
• Description: TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE
• Manufacturer: ISAHAYA [Isahaya Electronics Corporation]

MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
SYMBOL
SYMBOL
Ｖ
Ｒ
Ｖ
Ｖ
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
Ｖ
Ｖ
Ｔｓｔｇ
Ｖ
２
ＣＥ（ｓａｔ）
Ｉ
ｈ
Ｉ（ＯＦＦ）
Ｒ
Ｉ（ＯＮ）
Ｉ
Ｐ
／Ｒ
ＣＢＯ
Ｔｊ
ｆ
ＣＢＯ
ＥＢＯ
ＣＥＯ
ＦＥ
ＣＭ
Ｔ
１
Ｃ
Ｃ
100
1000
１
10
100
1
10
1
0.0
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
V
CE
V
=0.2V
CE
COLLECTOR CURRENT I
INPUT OFF VOLTAGE V
=5V
PARAMETER
0.4
PARAMETER
V S. C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
IN P U T ON V OL TA G E
C OL L EC TOR C U R R EN T
0.8
10
ISAHAYA ELECTRONICS CORPORATION
1.2
I(OFF)
ＲＴ１Ｎ４３１Ｘ SERIES
C
(mA)
RT1N431T
125
(V)
I
V
V
I
V
V
V
1.6
C
CB
CE
C
CE
CE
CE
=100μA，R
=5V，I
=10mA，I
=0.2V，I
=5V，I
=6V，I
=50V，I
（※ ）
-55～+125
100
2.0
+125
C
C
E
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
E
=-10mA
=10mA
C
=100μA
=0
B
=5mA
RT1N431U
BE
TEST CONDITION
=0.5mA
=∞
125
1000
100
10
1
V
CE
RT1N431M
RATING
=5V
COLLECTOR CURRENT I
D C F OR W A R D C U R R EN T GA IN
100
200
50
10
50
V S. C OL L EC TOR C U R R EN T
150
RT1N431C
-55～+150
10
+150
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
0.8
3.3
0.8
20
50
C
(mA)
RT1N431S
LIMIT
TYP
200
0.1
1.4
1.1
4.7
1.0
450
100
〈Transistor〉
MAX
0.1
0.3
2.3
6.1
1.2
UNIT
mW
mA
mA
℃
℃
V
V
V
UNIT
MHz
μA
kΩ
－
V
V
V
V