RT1N432C ISAHAYA [Isahaya Electronics Corporation], RT1N432C Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
RT1N432C
Manufacturer Part Number
RT1N432C
Description
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
Manufacturer
ISAHAYA [Isahaya Electronics Corporation]
Datasheet
1.RT1N432C.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RT1N432C-T112-1
Manufacturer:
MIT
Quantity:
3 000
Part Number:
RT1N432C-T112-1
Manufacturer:
SANYO/三洋
Quantity:
20 000
Company:
Part Number:
RT1N432C-T12-2
Manufacturer:
MITSUBISHI
Quantity:
50 700
MAXIMUM RATING (Ta=25 ℃)
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
TYPICAL CHARACTERISTICS
SYMBOL
V
SYMBOL
V
R
V
V
T s t g
( B R ) C E O
I
V
V
V
2
C E ( s a t )
I
h
I ( O F F )
I ( O N )
R
I
T j
P
C B O
f
/R
C M
C B O
E B O
C E O
F E
C
T
1
C
1
1000
100
10
0.1
10
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
1
0
1
V
V
CE
INPUT OFF VOLTAGE V
CE
=5V
COLLECTOR CURRENT I
0.4
=0.2V
PARAMETER
PARAMETER
V S . C O L L E C T O R C U R R E N T
V S . I N P U T O F F V O L T A G E
C O L L E C T O R C U R R E N T
I N P U T O N V O L T A G E
0.8
ISAHAYA ELECTRONICS CORPORATION
10
1.2
R T 1 N 4 3 2 X SERIES
I ( O F F )
C
( mA)
I
V
V
I
V
V
V
1.6
C
C
( V )
RT1N432U
-55∼+150
CB
CE
CE
CE
CE
=100μA,R
=5V,I
=0.2V,I
=5V,I
=6V,I
=50V,I
=10mA,I
+150
150
100
C
C
E
2
E
C
=-10mA
=10mA
B
=100μA
=0
=5mA
BE
TEST CONDITION
=0.5mA
RT1N432M
=∞
1000
100
10
1
RATING
100
200
200
V
50
50
7
CE
=5V
RT1N432C
-55∼+150
COLLECTOR CURRENT I
D C F O R W A R D C U R R E N T G A I N
V S . C O L L E C T O R C U R R E N T
+150
10
RT1N432S
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
450
MIN
0.5
3.3
1.7
50
30
C
( mA)
LIMIT
UNIT
TYP
200
mA
mA
0.1
1.0
0.8
4.7
2.1
℃
℃
V
V
V
mW
100
〈 Transistor 〉
MAX
0.1
0.3
1.8
6.1
2.6
UNIT
MHz
μA
kΩ
−
V
V
V
V