RT1P130C ISAHAYA [Isahaya Electronics Corporation], RT1P130C Datasheet - Page 2

• Manufacturer Part Number: RT1P130C
• Description: Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
• Manufacturer: ISAHAYA [Isahaya Electronics Corporation]

MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
SYMBOL
Ｖ
SYMBOL
Ｖ
Ｔ ｓ ｔ ｇ
（ Ｂ Ｒ ） Ｃ Ｅ Ｏ
Ｉ
Ｖ
Ｖ
Ｖ
Ｃ Ｅ （ ｓ ａ ｔ ）
Ｉ
ｈ
Ｒ
Ｉ
Ｔ ｊ
Ｐ
Ｃ Ｂ Ｏ
ｆ
Ｃ Ｍ
Ｃ Ｂ Ｏ
Ｅ Ｂ Ｏ
Ｃ Ｅ Ｏ
Ｃ
Ｆ Ｅ
Ｔ
１
Ｃ
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
PARAMETER
PARAMETER
ISAHAYA ELECTRONICS CORPORATION
Ｒ Ｔ １ P１ ３ ０ Ｘ SERIES
I
V
V
I
V
C
C
-55∼+150
RT1P130U
CB
CE
CE
=-100μA，R
=-5V，I
=-10mA，I
=-6V，I
=-50V，I
+150
150 200 450 mW
C
E
E
=10mA
=-1mA
B
=0
TEST CONDITION
BE
RT1P130M
=-0.5mA
=∞
RATING
-100
-200
-50
-50
-6
RT1P130C
-55∼+150
+150
RT1P130S
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MIN
-50
100
0.7
LIMIT
UNIT
TYP
150
mA
mA
1.0
V
V
V
℃
℃
MAX
-0.1
-0.3
1.3
UNIT
MHz
μA
kΩ
−
V
V