RT1P241M ISAHAYA [Isahaya Electronics Corporation], RT1P241M Datasheet - Page 2

• Manufacturer Part Number: RT1P241M
• Description: Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
• Manufacturer: ISAHAYA [Isahaya Electronics Corporation]

MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
SYMBOL
Ｒ
Ｖ
Ｖ
Ｖ
Ｔ ｓ ｔ ｇ
（ Ｂ Ｒ ） Ｃ Ｅ Ｏ
Ｉ
Ｖ
Ｖ
Ｖ
２
Ｃ Ｅ （ ｓ ａ ｔ ）
Ｉ
ｈ
Ｉ （ Ｏ Ｆ Ｆ ）
ｈ ｆ
Ｉ （ Ｏ Ｎ ）
Ｒ
Ｉ
Ｔ ｊ
Ｐ
Ｃ Ｂ Ｏ
／Ｒ
Ｃ Ｍ
Ｃ Ｂ Ｏ
Ｅ Ｂ Ｏ
Ｃ Ｅ Ｏ
Ｃ
Ｆ Ｅ
１
Ｃ
Ｔ
１
-1000
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
-100
-10
-0.1
-10
-1
-0
-1
Input on voltage - Collector Current
Collector Current-Input off voltage
PARAMETER
PARAMETER
-0.4
Input off voltage Ｖ Ｉ （ ＯＦ Ｆ ） （ Ｖ ）
Collector Current Ｉ Ｃ （ ｍＡ ）
-0.8
ISAHAYA ELECTRONICS CORPORATION
-10
-1.2
Ｒ Ｔ １ Ｐ ２ ４ １ Ｘ SERIES
-1.6
I
V
V
I
V
V
V
C
C
-55∼+150
RT1P241U
CB
CE
CE
CE
CE
=-100μA，R
=-5V，I
=-10mA，I
=-0.2V，I
=-5V，I
=-6V，I
=-50V，I
+150
150
-100
-2
C
C
E
E
C
=10mA
=-5mA
B
=-100μA
1000
=0
TEST CONDITION
=-5mA
100
BE
RT1P241M
10
=-0.5mA
1
=∞
-1
DC forward current gain -Collector Current
RATING
-100
-200
200
-50
-10
-50
Collector Current Ｉ Ｃ （ ｍＡ ）
RT1P241C
-55∼+150
+150
-10
RT1P241S
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
450
-0.8
MIN
-50
0.9
50
16
-100
LIMIT
UNIT
TYP
-0.1
-1.8
-1.1
150
mA
mA
1.0
℃
℃
22
V
V
V
mW
〈 Transistor 〉
MAX
-0.1
-0.3
-3.0
1.1
28
UNIT
MHz
μA
kΩ
−
V
V
V
V