AOU401L AOSMD [Alpha & Omega Semiconductors], AOU401L Datasheet

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AOU401L

Manufacturer Part Number
AOU401L
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AOU401 uses advanced trench technology and
design to provide excellent R
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU401 is Pb-free (meets ROHS & Sony
259 specifications). AOU401L is a Green Product
ordering option. AOU401 and AOU401L are
electrically identical.
AOU401
P-Channel Enhancement Mode Field Effect Transistor
G
B
C
C
G
T
T
T
T
C
C
C
C
TO-251
=25°C
=100°C
=25°C
=100°C
D
B
DS(ON)
S
A
A
=25°C unless otherwise noted
with low gate
Top View
Drain Connected
to Tab
C
Steady-State
Steady-State
Symbol
V
V
I
I
I
E
P
T
D
DM
AR
J
DS
GS
AR
D
, T
STG
Symbol
Features
V
I
R
R
R
D
R
DS
DS(ON)
DS(ON)
θJA
θJC
= -26 A (V
(V) = -60V
< 40 mΩ (V
< 55 mΩ (V
Maximum
-55 to 175
Typ
±20
134
100
GS
-60
-26
-18
-60
-26
1.9
60
30
= -10V)
G
GS
GS
= -10V) @ 20A
= -4.5V)
Max
125
2.5
D
S
Units
Units
°C/W
°C/W
mJ
°C
W
V
V
A
A

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AOU401L Summary of contents

Page 1

... The AOU401 uses advanced trench technology and design to provide excellent R DS(ON) charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU401 is Pb-free (meets ROHS & Sony 259 specifications). AOU401L is a Green Product ordering option. AOU401 and AOU401L are electrically identical. TO-251 G D ...

Page 2

AOU401 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...

Page 3

AOU401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V -10V 25 -6V - (Volts) DS Fig 1: On-Region Characteristics =-4. ...

Page 4

AOU401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-30V =-20A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R 10.0 DS(ON) 10ms limited DC 1.0 ...

Page 5

AOU401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =25° 0.00001 0.0001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability 100 T ...

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