k9k4g08q0m Samsung Semiconductor, Inc., k9k4g08q0m Datasheet - Page 2

• Manufacturer Part Number: k9k4g08q0m
• Description: 512m X 8 Bit / 256m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
GENERAL DESCRIPTION
Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity. Its NAND cell provides the most
cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300 s on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte(30ns, only X8 3.3v device) or
word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin-
ing of data. Even the write-intensive systems can take advantage of the K9XXGXXXXM s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9XXGXXXXM is an optimum solution for
large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra
high density solution having two 4Gb stacked with two chip selects is also available in standard TSOPI package.
- Memory Cell Array
- Page Size
- Random Read : 25 s(Max.)
- Data Register
- Page Program
- Block Erase
- Serial Access : 50ns(Min.)
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
- Cache Register
- X8 device(K9XXG08XXM) : 2K-Byte
- X16 device(K9XXG16XXM) : 1K-Word
-1.8V device(K9K4GXXQ0M): 1.70V~1.95V
-3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
-X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit
-X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit
-X8 device(K9XXG08XXM): (2K + 64)bit x8bit
-X16 device(K9XXG16XXM): (1K + 32)bit x16bit
-X8 device(K9XXG08XXM) : (2K + 64)bit x8bit
-X16 device(K9XXG16XXM) : (1K + 32)bit x16bit
-X8 device(K9XXG08XXM) : (2K + 64)Byte
-X16 device(K9XXG16XXM) : (1K + 32)Word
-X8 device(K9XXG08XXM) : (128K + 4K)Byte
-X16 device(K9XXG16XXM) : (64K + 2K)Word
K9XXG08UXM-Y
K9K4G08Q0M-Y
K9K4G16Q0M-Y
K9K4G16U0M-Y
Part Number
30ns(Min., K9XXG08UXM only)
K9K4G16Q0M
K9K4G16U0M
1.70 ~ 1.95V
2.7 ~ 3.6V
Vcc Range
2
- K9XXGXXXXM-PCB0/PIB0
- Program time : 300 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- K9XXGXXXXM-YCB0/YIB0
- K9W8G08U1M-YCB0/YIB0 : Two K9K4G08U0M stacked.
- K9W8G08U1M-PCB0/PIB0 : Two K9K4G08U0M stacked.
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
Organization
X16
X16
X8
X8
FLASH MEMORY
PKG Type
TSOP1