k9k8g08u0a-y Samsung Semiconductor, Inc., k9k8g08u0a-y Datasheet - Page 38
k9k8g08u0a-y
Manufacturer Part Number
k9k8g08u0a-y
Description
1g X 8 Bit / 2g X 8 Bit / 4g X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K9K8G08U0A-Y.pdf
(50 pages)
- Current page: 38 of 50
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4th ID Data
90 ID : Access command = 90H
3rd ID Data
ID Definition Table
1
2
3
4
5
Organization
Serial Access Minimum
Interleave Program
Between multiple chips
Page Size
(w/o redundant area )
Block Size
(w/o redundant area )
Redundant Area Size
( byte/512byte)
K9WAG08U1A
K9K8G08U0A K9NBG08U5A
Internal Chip Number
Cell Type
Number of
Simultaneously
Programmed Pages
Cache Program
st
nd
rd
th
th
Byte
Byte
Byte
Byte
Byte
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously Programmed Pages, Etc
Page Size, Block Size,Redundant Area Size, Organization, Serial Access Minimum
Plane Number, Plane Size
128KB
256KB
512KB
50ns/30ns
25ns
Reserved
Reserved
1KB
2KB
4KB
8KB
64KB
8
16
x8
x16
1
2
4
8
16 Level Cell
1
2
4
8
Not Support
Support
Not Support
Support
2 Level Cell
4 Level Cell
8 Level Cell
Description
Description
38
I/O7
0
1
I/O7
0
1
0
1
I/O6
0
1
I/O6
0
1
I/O5 I/O4
0
0
1
1
I/O5 I/O4
0
0
1
1
0
1
0
1
0
1
0
1
FLASH MEMORY
I/O3 I/O2
I/O3
0
0
1
1
0
0
1
1
0
1
0
1
I/O2
0
1
I/O1 I/O0
0
0
1
1
I/O1 I/O0
0
0
1
1
0
1
0
1
0
1
0
1
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