BTW68-1000 STMICROELECTRONICS [STMicroelectronics], BTW68-1000 Datasheet

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BTW68-1000

Manufacturer Part Number
BTW68-1000
Description
HIGH SURGE CAPABILITY
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.BTW68-1000.pdf (5 pages)

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BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BTW68-1000
Manufacturer:
ST
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Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BTW68-1000.
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BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BTW68-1000/1200
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Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BTW68-1000RG
Manufacturer:
ST
0
.
FEATURES
.
.
.
DESCRIPTION
The BTW 68 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS (limiting values)
March 1995
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 68 Serie :
INSULATED VOLTAGE = 2500V
(UL RECOGNIZED : E81734)
I T(RMS)
Symbol
Symbol
V DRM
V RRM
I T(AV)
I TSM
Tstg
dI/dt
I 2 t
Tj
Tl
RMS on-state current
(180 conduction angle)
Average
conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25 C )
I 2 t value
Critical rate of rise of on-state current
Gate supply : I G = 100 mA di G /dt = 1 A/ s
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Repetitive peak off-state voltage
Tj = 125 C
on-state
Parameter
(RMS)
current
Parameter
(180
BTW 68 N
BTW 68 N
BTW 68
BTW 68
200
200
BTW 68
400
400
tp=8.3 ms
tp=10 ms
tp=10 ms
Tc=80 C
Tc=85 C
Tc=80 C
Tc=85 C
600
600
K
BTW 68 / BTW 68 N
A
(Plastic)
TOP 3
800
800
BTW 68 (N)
G
- 40 to + 150
- 40 to + 125
Value
420
400
800
100
230
1000
1000
30
35
19
22
1200
1200
SCR
A/ s
Unit
Unit
A 2 s
A
V
A
A
C
C
C
1/5

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BTW68-1000 Summary of contents

Page 1

FEATURES . HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT . HIGH STABILITY AND RELIABILITY BTW 68 Serie : INSULATED VOLTAGE = 2500V (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon Controlled Recti- fiers uses a ...

Page 2

BTW 68 (N) THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values (AV 40W ( ELECTRICAL CHARACTERISTICS Symbol I ...

Page 3

Package I T(RMS) A BTW 68 30 (Insulated) BTW (Uninsulated) Fig.1 : Maximum average power dissipation versus average on-state current (BTW 68). Fig.3 : Maximum average power dissipation versus average on-state current (BTW 68 N). V DRM ...

Page 4

BTW 68 (N) Fig.5 : Average on-state current temperature (BTW 68). Fig.7 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1.00 Zth( j-c) 0.10 0.01 1E-3 1E-2 1E E+1 Fig.9 : Non repetitive surge peak ...

Page 5

Fig11 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TOP 3 Plastic 4 Cooling method : C Marking : type number Weight : 4.7 g Information furnished is believed to be accurate ...

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