mgf4714cp Mitsumi Electronics, Corp., mgf4714cp Datasheet

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mgf4714cp

Manufacturer Part Number
mgf4714cp
Description
Plastic Mold Packaged Low Noise Ingaas Hemt
Manufacturer
Mitsumi Electronics, Corp.
Datasheet
1.MGF4714CP.pdf (3 pages)
DESCRIPTION
The
Transistor) is designed for use in L to Ku band amplifiers.
The plastic mold package offer high cost performance, and has a
configuration suitable for microstrip circuits.
The MGF4714CP is mounted in Super 12 tape.
FEATURES
• Low noise figure
• High associated gain
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• V
• Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
NFmin.
V
I
I
V
gm
G
Symbol
Symbol
GSS
DSS
DS
V
V
I
(BR)GDO
GS(off)
P
T
T
S
D
GDO
GSO
ch
stg
T
=2V,I
MGF4714CP
NFmin.=1.00dB(MAX.)
Gs=11.0dB(MIN.)
D
=10mA
Gate to source leakage current
Gate to drain breakdown voltage
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
low-noise
Parameter
Parameter
@f=12GHz
@f=12GHz
HEMT(High
(T
I
V
V
V
V
V
f=12GHz
(T
a
G
=25˚C)
GS
GS
DS
DS
DS
=-10µA
a
Electron
=25˚C)
=-2V,V
=0V,V
=2V,I
=2V,I
=2V,I
-65 to +125
Ratings
D
D
D
125
DS
60
50
=500µA
=10mA
=10mA
-4
-4
DS
=2V
=0V
Mobility
PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
Test conditions
Unit
mW
GD-22
mA
OUTLINE DRAWING
˚C
˚C
V
V
MITSUBISHI SEMICONDUCTOR GaAs FET
(ø1.2)
2
(0.6)
(R0.1) (R0.1)
4.0±0.3
2.2±0.2
11.0
Min
-0.1
15
-3
–
–
–
MGF4714CP
1
3
0.5±0.1
Limits
(8˚)
Typ
55
–
–
–
–
–
–
2
3
1
2
1.00
Gate
Source
Drain
Max
-1.5
60
Unit:millimeters
50
–
–
–
Nov. ´97
Unit
mA
mS
dB
dB
µA
V
V

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mgf4714cp Summary of contents

Page 1

... HEMT(High Transistor) is designed for use band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits. The MGF4714CP is mounted in Super 12 tape. FEATURES • Low noise figure NFmin.=1.00dB(MAX.) @f=12GHz • High associated gain Gs=11 ...

Page 2

... V = 1.0 0.9 0.8 0.7 NF 0.6 0 (mA) D MITSUBISHI SEMICONDUCTOR GaAs FET PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT 60 T =25˚ (V) DRAIN TO SOURCE VOLTAGE MGF4714CP I vs =-0.1V/STEP V =0V GS 1.0 2.0 3.0 4.0 5.0 (V) DS Nov. ´97 ...

Page 3

... Angle(deg.) 163 2.52 MGF4714CP S12 S22 Angle Mag. Angle 64.0 0.655 -13.6 66.1 0.630 -26.0 59.0 0.596 -37.2 47.0 0.546 -49.8 36.9 0.493 -64.5 27.8 0.444 -79.4 19.2 0.397 -94.6 13.4 0.364 -107.2 7.2 0.344 -121.6 1.4 0.335 -136.7 -4 ...

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