ra13h3340m Quanzhou Jinmei Electronic Co.,Ltd., ra13h3340m Datasheet

ra13h3340m

Manufacturer Part Number

ra13h3340m

Description

Mitsubishi Rf Mosfet Module

Manufacturer

Quanzhou Jinmei Electronic Co.,Ltd.

Datasheet

1.RA13H3340M.pdf (8 pages)

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Bonase Electronics (HK) Co., Limited

Part Number:

RA13H3340M

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RFMD

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RA13H3340M

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Bonase Electronics (HK) Co., Limited

Part Number:

ra13h3340m-101

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Mitsubishi

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1 400

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DESCRIPTION

Module for 12.5-volt mobile radios that operate in the 330- to

400-MHz range.

enhancement-mode MOSFET transistors. Without the gate

voltage (V

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

• P

• Broadband Frequency Range: 330-400MHz

• Low-Power Control Current I

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

RoHS COMPLIANCE

• RA13H3340M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and

ORDERING INFORMATION:

RA13H3340M

current with the gate voltage and controlling the output power

with the input power

the lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

2.Lead in electronic Ceramic parts.

out

=5V, the typical gate current is 1 mA.

The RA13H3340M is a 13-watt RF MOSFET Amplifier

The battery can be connected directly to the drain of the

fluorescent tubes.

≅0 @ V

>13W, η

ORDER NUMBER

RA13H3340M-101

=0V), only a small leakage current flows into the

>40% @ V

=12.5V, V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

=0V)

=12.5V, V

RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO

=1mA (typ) at V

SUPPLY FORM

10 modules/tray

=5V, P

Antistatic tray,

MITSUBISHI ELECTRIC

=50mW

=5V

1/8

RA13H3340M

BLOCK DIAGRAM

MITSUBISHI RF MOSFET MODULE

RF Input (P

Gate Voltage (V

Drain Voltage (V

RF Output (P

RF Ground (Case)

PACKAGE CODE: H2S

)

out

)

), Power Control

), Battery

24 Jan 2006

Related parts for ra13h3340m

ra13h3340m Summary of contents

Page 1

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors ...

Page 2

... P =25-70mW <20W (V control), Load VSWR=3:1 out GG V =15.2V, P =50mW, P =13W ( out GG Load VSWR=20:1 MITSUBISHI ELECTRIC 2/8 MITSUBISHI RF POWER MODULE RA13H3340M RATING 17 6 100 20 -30 to +110 -40 to +110 MIN TYP MAX 330 400 13 40 -30 3 parasitic oscillation control), No degradation or destroy UNIT ...

Page 3

... OUTPUT POWER and DRAIN CURRENT 6 30 f=365MHz out (V) MITSUBISHI ELECTRIC 3/8 MITSUBISHI RF POWER MODULE RA13H3340M RoHS COMPLIANCE HARMONICS versus FREQUENCY V =12. = =50mW FREQUENCY f(MHz out f=365MHz =12.5V, ...

Page 4

... P P out 5.5 2.5 ( out 5.5 (V) MITSUBISHI ELECTRIC 4/8 MITSUBISHI RF POWER MODULE RA13H3340M RoHS COMPLIANCE versus GATE VOLTAGE 6 =12.5V =50mW P in out 3.5 4 4.5 5 5.5 GATE VOLTAGE V ( Jan 2006 ...

Page 5

... OUTLINE DRAWING (mm) 3.0 ±0.3 7.25 ±0 12.0 ±1 16.5 ±1 43.5 ±1 RA13H3340M RoHS COMPLIANCE 66.0 ±0.5 60.0 ±0.5 51.5 ±0 Ø0.45 ±0.15 55.5 ±1 (50.4) MITSUBISHI ELECTRIC 5/8 MITSUBISHI RF POWER MODULE RA13H3340M 2-R2 ±0 Input ( Gate Voltage ( Drain Voltage ( Output (P ) out 5 RF Ground (Case) 24 Jan 2006 ) ) ...

Page 6

... Power DUT Meter =50Ω G Directional Coupler Power Supply MITSUBISHI ELECTRIC 6/8 MITSUBISHI RF POWER MODULE RA13H3340M Spectrum 5 Analyzer =50Ω L Directional Attenuator Coupler + - DC Power Supply Input (P 2 Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case) ...

Page 7

... R I =40% th(ch-case (°C/W) (A) 20.0 0.18 2.4 2. case = T =13W, the required thermal resistance R out MITSUBISHI ELECTRIC 7/8 MITSUBISHI RF POWER MODULE RA13H3340M RoHS COMPLIANCE V DD (V) 12 are out in th(ch-case) + 16.0 °C case + 44.1 °C case ) below 90°C. For an ambient case = ( ...

Page 8

... Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA13H3340M RoHS COMPLIANCE =5V (maximum), the nominal output power becomes available. GG Keep safety first in your circuit designs! MITSUBISHI ELECTRIC 8/8 MITSUBISHI RF POWER MODULE RA13H3340M 24 Jan 2006 ...

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