q67040-s4276 Infineon Technologies Corporation, q67040-s4276 Datasheet - Page 8

• Manufacturer Part Number: q67040-s4276
• Description: Fast Igbt In Npt-technology
• Manufacturer: Infineon Technologies Corporation

Power Semiconductors
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
30
20
10
20V
15V
10V
0
CE
5V
0V
Figure 17. Typical gate charge
(I
μ
μ
μ
μ
10V
s
s
s
s
0nC
C
= 1200V, start at T
= 15A)
V
GE
11V
,
Q
50nC
GATE
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
100nC
j
= 25°C)
13V
U
150nC
CE
14V
=960V
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V≤V
100pF
300A
250A
200A
150A
100A
50A
1nF
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
V
CE
= 0V, f = 1MHz)
CE
V
,
≤1200V, T
GE
COLLECTOR
12V
,
GATE
10V
-
14V
EMITTER VOLTAGE
C
SGW15N120
SGP15N120
= 25°C, T
-
EMITTER VOLTAGE
20V
16V
Rev. 2.5
j
≤ 150°C)
18V
30V
Febr. 08
C
C
C
oss
rss
iss
20V