is75v16f128gs32 Integrated Silicon Solution, Inc., is75v16f128gs32 Datasheet - Page 7

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is75v16f128gs32

Manufacturer Part Number
is75v16f128gs32
Description
3.0 Volt Multi-chip Package Mcp 128 Mbit Simultaneous Operation Flash Memory And 32 Mbit Pseudo Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
DC CHARACTERISTICS
Notes:
1. ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
4. Applicable for only VCCf applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
6. ISB2 r depends on VIN cycle time. Please refer to “APPENDIX A”.
7. Standby current listed is for each FLASH chip.
8. Standby and Power down currents are reduced with Vccr
IS75V16F128GS32
Integrated Silicon Solution, Inc. — www.issi.com —
PRELIMINARY INFORMATION Rev. 00D
03/24/03
Symbol Parameter
I
V
V
V
V
V
V
V
V
V
V
PD
IL
IH
IH
ID
ACC
OL
OH
OL
OH
LKO
8
r
PSRAM V
Down Current
(8M Partial)
Input Low Level
Input High Level (FLASH 1 or FLASH 2 )
Input High Level (PSRAM)
Voltage for Sector Protection
and Temp. Unprotection(RESET)
Voltage for WP/ACC
Sector Protection/Unprotection
and Program Acceleration
Output Low Level
(PSRAM)
Output High Level
(PSRAM)
Output Low Level
(Flash)
Output High Level
(Flash)
FLASH Low Vccf
Lock-Out Voltage
CC
(8)
Power
(Continued)
(4)
Test Conditions
V
CE1r
V
I
V
I
V
I
V
I
CE2r
OL
OH
OL
OH
CC
CC
CC
CC
CC
(4)
= 1.0 mA
= 4.0 mA
= -0.5 mA
= -0.1 mA
r = V
r = V
r = V
f = V
f = V
V
0.2 V, V
CC
CC
CC
CC
CC
CC
f min., V
f min., V
r max.,
r min., V
r min., V
r - 0.2 V
IN
<
1-800-379-4774
3.0 V .
Cycle time = t
CCS
CCS
CCS
CCS
=V
=V
=V
=V
CCS
CCS
CCS
CCS
min.
min.
min.
min.
RC
min
V
V
V
CC
CC
CC
11.5
Min.
-0.3
f
r
8.5
2.2
2.3
f - 0.4 —
X
X
0.75 —
0.75 —
Typ.
9.0
2.4
V
V
CC
CC
Max.
12.5
0.45
0.5
9.5
0.4
2.5
r + 0.3
80
f + 0.3
ISSI
Unit
V
V
V
V
V
V
V
V
V
V
A
®
7

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