pzt2907 Diotec Semiconductor AG, pzt2907 Datasheet - Page 2

• Manufacturer Part Number: pzt2907
• Description: Pnp Suface Mount Si-epitaxial Planar Switching Transistors
• Manufacturer: Diotec Semiconductor AG

1
2
Characteristics (T
DC current gain – Kollektor-Basis-Stromverhältnis
Gain-Bandwidth Product – Transitfrequenz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
Emitter-Base Capacitance – Emitter-Basis-Kapazität
Switching times – Schaltzeiten
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Mounted on P.C. board with 3 mm
Montage auf Leiterplatte mit 3 mm
- I
- I
- I
- I
- I
- I
- V
- V
delay time
rise time
storage time
fall time
C
C
C
C
C
C
CB
EB
= 0.1 mA, - V
= 1 mA,
= 10 mA, - V
= 150 mA, - V
= 500 mA, - V
= 20 mA, - V
= 10 V, I
= 0.5 V, I
E
C
- V
= i
= i
j
CE
= 25°C)
CE
CE
CE
CE
CE
e
= 20 V, f = 100 MHz
c
= 0, f = 1 MHz
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 0, f = 1 MHz
2
2
copper pad at each terminal
Kupferbelag (Lötpad) an jedem Anschluss
- V
- I
- V
- I
B1
B1
CC
CC
= 15 mA
= - I
= 30 V, - I
= 6 V, - I
B2
http://www.diotec.com/
= 15 mA
C
C
= 150 mA,
= 150 mA,
PZT2907
PZT2907A
PZT2907
PZT2907A
PZT2907
PZT2907A
PZT2907
PZT2907A
PZT2907
PZT2907A
C
C
R
R
h
h
h
h
h
h
h
h
h
h
f
t
t
t
t
CBO
EBO
thA
thS
FE
FE
FE
FE
FE
FE
FE
FE
FE
FE
T
d
r
s
f
200 MHz
Min.
100
100
100
100
35
75
50
75
30
50
–
–
–
–
–
–
PZT2222, PZT2222A
Kennwerte (T
< 93 K/W
© Diotec Semiconductor AG
< 27 K/W
PZT2907 / PZT2907A
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1
)
j
= 25°C)
Max.
30 pf
8 pF
300
300
10
40
80
30
–
–
–
–
–
–
–
–
–