blv5n60 Estek Electronics Co. Ltd, blv5n60 Datasheet - Page 2

• Manufacturer Part Number: blv5n60
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: Estek Electronics Co. Ltd

Electrical Characteristics
Note：
Source-Drain Diode Characteristics
BV
R
V
g
I
I
Q g
Q gs
Q gd
t
t
t
t
C iss
C oss
C rss
I
I
V
t
Q
/ T
DSS
GSS
S
SM
r r
Symbol
(on)
r
(off)
f
BV
GS(th)
SD
DS(ON)
r r
fs
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
(3) Pulse width
DSS
Symbol
J
DSS
L=18.9mH, Ias=4.5A，Vdd=50V，Rg=25 ，staring Tj=25C
Drain-Source Breakdown Voltage
Breakdown Voltage
Temperature Coefficient
Static Drain-Source On-Resistance V
Gate Threshold Voltage
Forward Transconductance(note3)
Drain-Source Leakage Current
Drain-Source Leakage Current
Tc=125℃
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Diode Forward Current
Pulsed Source Diode Forward Current (note1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
300 us; duty cycle
Parameter
Parameter
(
T
C
=25C unless otherwise noted )
2%
Total 6 Pages
- 2 -
V
Reference to 25℃,
I
V
V
V
V
V
V
I
V
note3
V
I
R
note3
V
V
f = 1MHz
V
V
dI
D
D
D
GS
GS
DS
DS
DS
DS
GS
DD
GS
DD
DS
GS
GS
GS
=250uA
=4.5A
=4.5A
G
Test Conditions
F
N-channel Enhancement Mode Power MOSFET
Test Conditions
=25
/dt = 100A/us
=0V, I
=10V, I
=V
=15V, I
=600V, V
=480V , V
= ± 20V
=25V
=480V
=10V
=300V
=0V
=0V, I
=0V, I
GS
, I
D
S
S
D
=250uA
D
=4.5A
=4.5A
D
=250uA
=2.25A
=2.25A
GS
GS
=0V
=0V
Min.
Min.
600
-
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
680
23.7
690
125
0.6
4.7
5.4
9.4
13
21
35
25
14
-
-
-
-
-
-
2
-
-
-
BLV5N60
Max.
Max.
±100
4.5
1.4
100
2.5
18
4
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
V/℃
nC
nC
nC
uA
uA
nA
pF
pF
pF
Ω
ns
ns
ns
ns
uC
ns
V
V
S
A
A
V