CR02AM-4 MITSUBISHI [Mitsubishi Electric Semiconductor], CR02AM-4 Datasheet - Page 4

• Manufacturer Part Number: CR02AM-4
• Description: LOW POWER USE PLANAR PASSIVATION TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

160
140
120
100
160
140
120
100
160
140
120
100
ALLOWABLE AMBIENT TEMPERATURE VS.
ALLOWABLE AMBIENT TEMPERATURE VS.
ALLOWABLE AMBIENT TEMPERATURE VS.
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
(SINGLE-PHASE FULL WAVE)
0.1
0.1
= 30 60
(RECTANGULAR WAVE)
= 30
0.1
NATURAL
CONVECTION
0.2
0.2
60
90
0.2
= 30
RESISTIVE LOADS
NATURAL
CONVECTION
90
60
120
0.3
0.3
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
120
90
360
RESISTIVE,
INDUCTIVE
LOADS
120
360
0.3
180
180
0.4
0.4
180
360
270
DC
0.4
0.5
0.5
MITSUBISHI SEMICONDUCTOR THYRISTOR
160
140
120
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
MAXIMUM AVERAGE POWER DISSIPATION
MAXIMUM AVERAGE POWER DISSIPATION
80
60
40
20
0
0
0
–40
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
–20
JUNCTION TEMPERATURE ( C)
(SINGLE-PHASE FULL WAVE)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
0.1
0.1
(RECTANGULAR WAVE)
0
= 30
20
= 30
60
0.2
0.2
40
PLANAR PASSIVATION TYPE
90
TYPICAL EXAMPLE
60
60
RESISTIVE LOADS
120
0.3
0.3
80
90
180
RESISTIVE,
INDUCTIVE
LOADS
100
120
360
R
LOW POWER USE
270
GK
120 140
0.4
0.4
180
360
= 1k
DC
CR02AM
160
0.5
0.5
Sep.2000