BCP120T BEREX [BeRex Corporation], BCP120T Datasheet - Page 2

• Manufacturer Part Number: BCP120T
• Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
• Manufacturer: BEREX [BeRex Corporation]

ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) T
MAXIMUM RATING (T
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
www.berex.com
SYMBOL
SYMBOL
BV
T
G
BV
V
P
PAE
V
T
I
P
I
G
P
I
R
V
gsf
ds
stg
dss
ch
1dB
ds
gs
1dB
in
t
th
m
p
gd
gs
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
Output Power @ P
I
Gain @ P
PAE @ P
Saturated Drain Current (V
Transconductance (V
Pinch-off Voltage (I
Drain Breakdown Voltage (I
Source Breakdown Voltage (I
Thermal Resistance (Au-Sn Eutectic Attach)
dss
)
PARAMETER/TEST CONDITIONS
BeRex, Inc. 1735 North 1
1dB
Specifications are subject to change without notice. ©BeRex 2011
1dB
a
(V
= 25° C)
(V
PARAMETERS
ds
ds
= 8V, I
= 8V, I
1dB
ds
ds
= 1.2 mA, V
(V
ds
ds
= 2V, V
ds
= 50% I
= 50% I
= 8V, I
gs
gd
g
= 0V, V
= 0.8 mA, source open)
st
gs
= 0.8 mA, drain open)
dss
Street #302 San Jose, CA 95112 tel. [phone]
dss
ds
= 50% I
ds
)
)
= 50%
= 2V)
ds
= 1.0V)
dss
)
a
= 25° C
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
FREQ.
TEST
-60° C - 150° C
ABSOLUTE
29 dBm
60 mA
175° C
4.9 W
12 V
-6 V
I
dss
MIN.
29.0
11.0
-2.5
240
Rev. 1.2
TYPICAL
30.0
30.0
12.0
360
480
-1.1
9.0
-15
-13
50
45
41
@ 3dB compression
CONTINUOUS
-60° C - 150° C
10 mA
150° C
4.1 W
MAX.
-3 V
-0.5
480
-12
8 V
I
September 2011
BCP120T
dss
°C/W
UNIT
dBm
mA
mS
dB
%
V
V
V