HLMP-D150-10000 HP [Agilent(Hewlett-Packard)], HLMP-D150-10000 Datasheet - Page 3
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HLMP-D150-10000
Manufacturer Part Number
HLMP-D150-10000
Description
T-13/4 (5 mm), T-1 (3 mm), Low Current, Double Heterojunction AlGaAs Red LED Lamps
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet
1.HLMP-D150-10000.pdf
(6 pages)
Absolute Maximum Ratings at T
Parameter
Peak Forward Current
Average Forward Current
DC Current
Power Dissipation
Reverse Voltage (I
Transient Forward Current (10 s Pulse)
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
Wave Soldering Temperature [1.59 mm (0.063 in.) from body]
Lead Solder Dipping Temperature [1.59 mm (0.063 in.) from body]
Notes:
1. Maximum I
2. Derate linearly as shown in Figure 4.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and wire bonds. It is
Electrical/Optical Characteristics at T
Symbol
V
V
C
R
Notes:
1. The dominant wavelength,
2. The radiant intensity, I
3. HLMP-D150.
4. HLMP-D155.
5. HLMP-K150/-K155.
3
S
F
R
p
d
V
not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current.
luminous efficacy in lumens/watt.
J-PIN
1
/
2
[2]
PEAK
Description
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Dominant Wavelength
Spectral Line Halfwidth
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy
at f = 1 kHz, DF = 6.7%.
R
= 100 A)
e
, in watts per steradian, may be found from the equation I
[1]
d
, is derived from the CIE chromaticity diagram and represents the color of the device.
A
= 25 C
A
[3]
= 25 C
Min.
5.0
Typ.
1.6
15.0
645
637
20
30
30
260
210
290
80
[3]
[4]
[5]
e
= l
Max.
1.8
V
/
V
, where I
V
nm
ns
pF
Unit
V
V
nm
nm
Im/W
is the luminous intensity in candelas and
C/W
Value
300 mA
20 mA
30 mA
87 mW
5 V
500 mA
110 C
-20 to +100 C
-55 to +100 C
250 C for 3 seconds
260 C for 5 seconds
Test Condition
I
I
Measurement at Peak
Note 1
Exponential Time
Constant, e
V
Junction to Cathode Lead
Note 2
F
R
F
= 1 mA
= 100 A
= 0, f = 1 MHz
-t
/T
S
V
is