S2721-02 HAMAMATSU [Hamamatsu Corporation], S2721-02 Datasheet - Page 3

• Manufacturer Part Number: S2721-02
• Description: Si PIN photodiode Dual-element, plastic package photodiode
• Manufacturer: HAMAMATSU [Hamamatsu Corporation]

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Dimensional outlines (unit: mm, tolerance unless
otherwise noted: ±0.1)
S2721-02
S4204
5.0 ± 0.4
(0.8)
4.9 ± 0.4
(0.8)
(INCLUDING BURR)
5˚
(1.0)
14.5 ± 0.3
3˚
4.6 ± 0.2
(INCLUDING BURR)
(1.25)
13.8 ± 0.3
4.1 ± 0.2
4.5 *
10˚
5˚
4.0 *
(1.0)
(1.25)
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
5.0 ± 0.4
4.9 ± 0.4
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
ACTIVE AREA
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
Si PIN photodiode
(0.8)
(0.8)
ACTIVE AREA
PHOTODIODE
DETAILS OF
Chip position accuracy with respect
to the package dimensions marked *
X, Y
PHOTODIODE
DETAILS OF
1.0
Chip position accuracy with respect
to the package dimensions marked *
X, Y
a
b
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
a b
1.0
±0.2
±2 ˚
±2 ˚
0.005
±0.2
S2721-02, S3096-02, S4204, S8703
KMPDA0120EA
KMPDA0118EA
ACTIVE AREA
S8703
S3096-02
7.5˚ ± 5˚
(INCLUDING BURR)
5.2 ± 0.2
4.1 ± 0.2
10˚
5˚
5˚
4.0 *
0.5
0.4
1.27
(INCLUDING BURR)
(INCLUDING BURR)
5.0 MAX.
5.0 MAX.
10˚
ANODE a
CATHODE COMMON
ANODE b
ACTIVE AREA
4.7 *
4.7 *
4.8 *
PHOTOSENSITIVE
SURFACE
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
1.27
PHOTOSENSITIVE
SURFACE
PHOTODIODE
DETAILS OF
Chip position accuracy with respect
to the package dimensions marked *
X, Y
1.8
1.2
a
b
0.8
0.25
Shaded area indicates burr.
Chip position accuracy with respect
to the package dimensions marked *
X, Y ±0.2
±0.2
±2 ˚
PHOTODIODE
DETAILS OF
a
±2˚
0.5
0.8
2.0
1.8
0.02
b
0.25
DEPTH 0.15 MAX.
Cat. No. KMPD1039E03
Dec. 2003 DN
2.0
KMPDA0119EA
KMPDA0181EA
3