S3204 HAMAMATSU [Hamamatsu Corporation], S3204 Datasheet - Page 2

• Manufacturer Part Number: S3204
• Description: Si PIN photodiode Large area sensors for scintillation detection
• Manufacturer: HAMAMATSU [Hamamatsu Corporation]

2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Dimensional outlines (unit: mm)
100 nA
100 pA
10 nA
S3204 series
1 nA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200
0.1
WHITE CERAMIC
S3584-05/-06
S3204/S3584-08
PHOTOSENSITIVE
SURFACE
400
REVERSE VOLTAGE (V)
S3204-05/-06
1
WAVELENGTH (nm)
3.4
600
S3584-08/-09
25.5
S3204/S3584-05
LEAD
18.0
0.45
10
+0
-
0.6
ACTIVE AREA
800
1.75
S3204-08/-09
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
1000
S3204-05/-06 1.0
S3204-08/-09
1000
1200
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
Type No.
KPINB0227EA
KPINB0228EB
1.2
a
100 nA
100 pA
10 µA
10 nA
10 pA
1 µA
1 nA
1 pA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-20
200
S3204-05/-06 (V
S3204/S3584-09
Si PIN photodiode
KPINA0040EB
S3584-05/-06 (V
AMBIENT TEMPERATURE (˚C)
400
0
WAVELENGTH (nm)
R
=100 V)
600
20
S3204-08/-09 (V
S3204/S3584-06
R
=100 V)
S3584-08/-09 (V
800
40
S3584 series
R
(Typ. Ta=25 ˚C)
=70 V)
1000
60
R
=70 V)
(Typ.)
PHOTOSENSITIVE
SURFACE
WHITE CERAMIC
1200
80
KPINB0264EA
KPINB0229EB
S3204/S3584 series
3.4
35.6
28.0
LEAD
+0
-
0.8
0.45
100 pF
ACTIVE AREA
10 nF
10 pF
1 nF
+1.5
+1.0
+0.5
-0.5
0
200
0.1
1.75
400
REVERSE VOLTAGE (V)
1
S3204-05/-06
WAVELENGTH (nm)
S3584-08/-09
S3584-05/-06 1.0
S3584-08/-09
Type No.
600
10
(Typ. Ta=25 ˚C, f=1 MHz)
S3584-05/-06
1.2
a
800
Cat. No. KPIN1051E05
Mar. 2006 DN
S3204-08/-09
100
KPINA0041EB
1000
(Typ.)
1000
KPINB0093EC
KPINB0230EB