NBB-312-E RF Micro Devices, NBB-312-E Datasheet - Page 2

• Manufacturer Part Number: NBB-312-E
• Description: CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
• Manufacturer: RF Micro Devices

4-26
Absolute Maximum Ratings
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent damage.
Overall
Small Signal Power Gain, S21
Gain Flatness, GF
Input VSWR
Output VSWR
Bandwidth, BW
Output Power @
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
Gain Temperature Coefficient,
MTTF versus Temperature
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
@ I
NBB-312
-1dB Compression, P1dB
δG
CC
T
/δT
=50mA
Parameter
Parameter
D
Min.
12.5
12.0
11.4
9.0
4.7
-65 to +150
-45 to +85
Rating
Specification
+20
350
200
70
>1,000,000
-0.0015
1.65:1
Typ.
+24.0
1.2:1
2.0:1
1.5:1
-15.6
12.9
12.9
11.7
+0.6
11.0
14.9
15.8
15.0
12.0
123
152
9.7
4.9
5.0
85
Max.
Unit
dBm
mW
mA
5.3
°C
°C
°C
dB/°C
Unit
hours
°C/W
GHz
dBm
dBm
dBm
dBm
dBm
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
dB
dB
dB
dB
dB
dB
dB
°C
°C
V
V
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 8.0GHz
f=8.0GHz to 12.0GHz
f=0.1GHz to 8.0GHz
f=0.1GHz to 7.0GHz
f=7.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=0.1GHz to 12.0GHz
BW3 (3dB)
f=2.0GHz
f=6.0GHz
f=8.0GHz
f=12.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 12.0GHz
J
-------------------------- -
D
T
Caution! ESD sensitive device.
V
=+5V, I
–
D
T
⋅
CASE
I
CC
CC
=50mA, Z
=
Condition
θ
JC
(
0
°C Watt
=50Ω, T
Rev A3 030912
⁄
A
=+25°C
)