IDT71T016 Integrated Device Technology, IDT71T016 Datasheet - Page 5

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IDT71T016

Manufacturer Part Number
IDT71T016
Description
LOW POWER 2V CMOS SRAM 1 MEG (64K x 16-BIT)
Manufacturer
Integrated Device Technology
Datasheet

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IDT71T016
LOW POWER 2V CMOS STATIC RAM 1 MEG (64K x 16-BIT)
AC ELECTRICAL CHARACTERISTICS
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
NOTES:
1.
2. Device is continuously selected,
3.
TIMING WAVEFORM OF READ CYCLE NO. 1
Symbol
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
RC
AA
ACS
CLZ
CHZ
OE
OLZ
OHZ
OH
BE
BLZ
BHZ
WC
AW
CW
BW
AS
WR
WP
DW
DH
OW
WHZ
WE
OE
ADDRESS
(1)
(1)
(1)
(1)
(1)
(1)
(1)
DATA
,
(1)
is HIGH for Read Cycle.
BHE
, and
OUT
BLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Low to Output in Low-Z
Chip Select High to Output in High-Z
Output Enable Low to Output Valid
Output Enable Low to Output in Low-Z
Output Enable High to Output in High-Z
Output Hold from Address Change
Byte Enable Low to Output Valid
Byte Enable Low to Output in Low-Z
Byte Enable High to Output in High-Z
Write Cycle Time
Address Valid to End of Write
Chip Select Low to End of Write
Byte Enable Low to End of Write
Address Set-up Time
Address Hold from End of Write
Write Pulse Width
Data Valid to End of Write
Data Hold Time
Write Enable High to Output in Low-Z
Write Enable Low to Output in High-Z
are LOW.
PREVIOUS DATA
CS
is LOW.
Parameter
OUT
t
OH
VALID
(V
t
DD
AA
= 1.8 to 2.7V, All Temperature Ranges)
(1,2,3)
t
RC
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
71T016L150
Min.
150
150
120
120
120
100
20
20
15
20
60
0
0
0
5
DATA
Max.
OUT
150
150
30
75
30
75
30
40
VALID
Min.
71T016L200
200
200
160
160
160
140
t
20
20
15
20
80
OH
0
0
0
5
Max.
200
200
100
100
40
40
40
50
3777 drw 06
3777 tbl 10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5

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