CY7C199-10ZI Cypress Semiconductor, CY7C199-10ZI Datasheet - Page 3

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CY7C199-10ZI

Manufacturer Part Number
CY7C199-10ZI
Description
32K x 8 Static RAM
Manufacturer
Cypress Semiconductor
Datasheet
Document #: 38-05160 Rev. *A
Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Note:
Equivalent to:
I
I
C
C
Parameter
OUTPUT
4.
5.
6.
SB1
SB2
V
I
t
t
CCDR
CDR
R
IN
OUT
DR
[5]
Parameter
Tested initially and after any design or process changes that may affect these parameters.
t
No input may exceed V
INCLUDING
R
V
[4]
CE
< 3 ns for the -12 and the -15 speeds. t
5V
CC
JIG AND
SCOPE
Parameter
30 pF
OUTPUT
Automatic CE
Power-down Current—
TTL Inputs
Automatic CE
Power-down Current—
CMOS Inputs
[4 ]
R1 481
THÉ VENIN EQUIVALENT
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Description
(a)
CC
CC
for Data Retention
+ 0.5V.
R2
255
167
Input Capacitance
Output Capacitance
Description
R
Over the Operating Range (-20, -25, -35, -45) (continued)
< 5 ns for the -20 and slower speeds
OUTPUT
Description
INCLUDING
t
5V
CDR
Max. V
V
f = f
Max. V
CE > V
V
V
1.73V
[5]
3.0V
JIG AND
Over the Operating Range (L-version only)
IN
IN
IN
SCOPE
MAX
> V
> V
< 0.3V, f=0
5 pF
Test Conditions
Com’l
Com’l L
IH
CC
CC
CC
CC
or V
, CE > V
,
– 0.3V
– 0.3V or
R1 481
IN
(b)
< V
IH
DATA RETENTION MODE
IL
T
V
,
,
V
0.3V, V
0.3V
A
CC
Com’l
L
Com’l
L
Mil
R2
255
CC
= 25 C, f = 1 MHz,
= 5.0V
= V
V
DR
IN
Test Conditions
Conditions
DR
> V
Min. Max. Min. Max. Min. Max.
> 2V
7C199-20
= 2.0V, CE > V
CC
– 0.3V or V
0.05
30
10
15
5
GND
3.0V
[6]
7C199-25
CC
IN
10%
<
t
r
0.05
30
10
15
5
3.0V
Min.
200
2.0
[3]
ALL INPUT PULSES
0
t
R
7C199-35
90%
Max.
8
8
0.05
25
10
15
5
Max.
10
Min.
7C199-45
CY7C199
90%
Page 3 of 13
Max.
10%
0.05
Unit
25
10
15
pF
pF
5
Unit
t
ns
r
V
A
A
s
Unit
mA
mA
mA
mA
A

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