KM68U1000B Samsung semiconductor, KM68U1000B Datasheet - Page 6

no-image

KM68U1000B

Manufacturer Part Number
KM68U1000B
Description
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
Manufacturer
Samsung semiconductor
Datasheet
TIMMING DIAGRAMS
KM68V1000B, KM68U1000B Family
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
CS
OE
Data out
t
HZ
levels.
interconnection.
1
2
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
t
(Address Controlled
HZ
(WE=V
OH
(Max.) is less than
t
AA
t
t
CO2
CO1
IH
t
)
OE
t
AA
,
t
CS
RC
t
t
RC
LZ
1
(Min.) both for a given device and from device to device
=OE=V
lL
, WE=V
Data Valid
IH
)
Data Valid
t
t
OHZ
OH
t
HZ(1,2)
CMOS SRAM
Revision 2.0
March 1998

Related parts for KM68U1000B