AP4501M A-POWER [Advanced Power Electronics Corp.], AP4501M Datasheet
AP4501M
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AP4501M Summary of contents
Page 1
... Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 N-channel Parameter 3 AP4501M N-CH BV 30V DSS R 28mΩ DS(ON P-CH BV -30V DSS R 50mΩ DS(ON) I -5. Rating ...
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... AP4501M N-CH Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... I =-5. =-15V DS V =-10V =-15V =6Ω, =15Ω = =-15V DS f=1.0MHz Test Conditions =25℃ AP4501M Min. Typ. Max. Units =-250uA -30 - =-1mA - -0.028 D =-5. =-4. =-250uA - =-5.3A - 8 ...
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... AP4501M N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics (V) GS Fig 3. On-Resistance v.s. Gate Voltage 36 10V 8.0V 6.0V 5.0V V =4. = Fig 2. Typical Output Characteristics 2 I =7.0A D =25 ℃ ℃ ℃ ℃ 1.4 0.8 0.2 10 ...
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... Fig 7. Maximum Safe Operating Area 2.4 1.8 1.2 0.6 0 100 125 150 1ms 0.1 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 8. Effective Transient Thermal Impedance AP4501M 0 50 100 o T ,Case Temperature ( C) c Fig 6. Typical Power Dissipation Duty Factor = 0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty Factor = t/T Peak =135 thja 0 ...
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... AP4501M N-Channel 12 I =7. =20V DS V =24V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100 150 0.1 0.01 0 0.4 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics 3 2 ...
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... AP4501M N-Channel 10V - Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.5 x RATED Fig 14. Switching Time Waveform THE OSCILLOSCOPE 4.5V 0.8 x RATED V DS Fig 16. Gate Charge Waveform ...
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... AP4501M P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics (V) GS Fig 3. On-Resistance v.s. Gate Voltage 20 10V 8. Fig 2. Typical Output Characteristics 1.8 I =-5.3A D =25 ℃ ℃ ℃ ℃ ...
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... Fig 8. Effective Transient Thermal Impedance 2.4 1.8 1.2 0 ,Case Temperature ( c Fig 6. Typical Power Dissipation 1 Duty Factor = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0 Pulse Width (s) AP4501M 100 150 Duty Factor = t/T Peak thja =135 C/W thja 10 100 1000 ...
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... AP4501M P-Channel 14 I =-5. =-10V DS V =-15V =-20V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100.00 10. =150 C j 1.00 0.10 0.01 0.1 0.4 0 Fig 11. Forward Characteristic of Reverse Diode = 1.3 (V) 10000 1000 100 ...
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... -1~-3mA I G Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.5 x RATED THE OSCILLOSCOPE -10V 0.5 x RATED d(on) r Fig 14. Switching Time Waveform Charge Fig 16. Gate Charge Waveform AP4501M t d(off ...