CS55B CENTRAL [Central Semiconductor Corp], CS55B Datasheet
CS55B
Manufacturer Part Number
CS55B
Description
SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
Manufacturer
CENTRAL [Central Semiconductor Corp]
Datasheet
1.CS55B.pdf
(2 pages)
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS55B series type are epoxy molded silicon controlled rectifiers designed
for applications requiring a low gate sensitivity.
MAXIMUM RATINGS (T A =25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (T C =60 o C)
Peak One Cycle Surge (t=10ms)
I 2 t Value for Fusing (t=10ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted)
SYMBOL
I DRM ,I RRM
I DRM ,I RRM
I GT
I H
V GT
V TM
dv/dt
V D =.67 x V DRM , R GK =1KΩ, T C =125°C
TEST CONDITIONS
Rated V DRM ,V RRM , R GK =1KΩ
Rated V DRM ,V RRM , R GK =1KΩ, T C =125°C
V D =12V
R GK =1KΩ
V D =12V
I TM =1.0A
SYMBOL
V DRM ,V RRM
T stg
T J
Θ JA
Θ JC
I T(RMS)
I TSM
I 2 t
P GM
P G(AV)
I GM
V GM
(SEE REVERSE SIDE)
CS55B
200
-40 to +125
-40 to +125
SILICON CONTROLLED RECTIFIER
0.24
200
100
0.8
2.0
0.1
1.0
8.0
10
0.8 AMPS, 200 AND 400 VOLTS
MIN
25
TO-92 CASE
TYP
CS55D
100
400
CS55D
CS55B
MAX
1.00
5.00
1.70
200
0.8
UNITS
µA
DATA SHEET
°C/W
°C/W
UNITS
V/µs
A 2 s
W
W
°C
°C
µA
µA
mA
V
A
A
A
V
V
V
R1
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CS55B Summary of contents
Page 1
... DESCRIPTION The CENTRAL SEMICONDUCTOR CS55B series type are epoxy molded silicon controlled rectifiers designed for applications requiring a low gate sensitivity. MAXIMUM RATINGS (T A =25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current ( Peak One Cycle Surge (t=10ms Value for Fusing (t=10ms) Peak Gate Power (tp=10µ ...
Page 2
... CS55B / CS55D RMS ON-STATE CURRENT vs. CASE TEMPERATURE 1 0.8 0.6 0.4 0 100 T , CASE TEMPERATURE (°C) C TO-92 PACKAGE - MECHANICAL OUTLINE 1.5 1 0.5 0 125 150 0 SYMBOL A (DIA Lead Code SILICON CONTROLLED RECTIFIER MAXIMUM ON-STATE CHARACTERISTICS T =125°C ...