MM908E622ACDWBR2 FREESCALE [Freescale Semiconductor, Inc], MM908E622ACDWBR2 Datasheet - Page 15

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MM908E622ACDWBR2

Manufacturer Part Number
MM908E622ACDWBR2
Description
Integrated Quad Half-bridge, Triple High Side and EC Glass Driver with Embedded MCU and LIN for High End Mirror
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
Table 4. Dynamic Electrical Characteristics
microcontroller chip. Characteristics noted under conditions 9.0V
Typical values noted reflect the approximate parameter mean at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
LIN PHYSICAL LAYER
Notes
Driver Characteristics for Normal Slew Rate
Dominant Propagation Delay TXD to LIN
Dominant Propagation Delay TXD to LIN
Recessive Propagation Delay TXD to LIN
Recessive Propagation Delay TXD to LIN
Duty Cycle 1: D1 = t
Duty Cycle 2: D2 = t
Driver Characteristics for Slow Slew Rate
Dominant Propagation Delay TXD to LIN
Dominant Propagation Delay TXD to LIN
Recessive Propagation Delay TXD to LIN
Recessive Propagation Delay TXD to LIN
Duty Cycle 3: D3 = t
Duty Cycle4: D4 = t
Driver Characteristics for Fast Slew Rate
LIN High Slew Rate (Programming Mode)
Receiver Characteristics and Wake-up Timings
Receiver Dominant Propagation Delay
Receiver Recessive Propagation Delay
Receiver Propagation Delay Symmetry
Bus Wake-up Deglitcher
Bus Wake-up Event Reported
24.
25.
26.
27.
28.
All characteristics are for the analog chip only. Please refer to the 68HC908EY16 datasheet for characteristics of the
V
LIN signal threshold defined at each parameter.
See
See
Measured between LIN signal threshold V
t
rise time is strongly dependent upon the decoupling capacitor at the VDD pin.
WAKE
SUP
Figure
Figure
from 7.0V to 18V, bus load R0 and C0 1.0nF / 1.0kΩ, 6.8nF / 660Ω, 10nF / 500Ω. Measurement thresholds: 50% of TXD signal to
is typically 2 internal clock cycles after LIN rising edge detected. See
6, page 17.
7, page 18.
BUS_REC(MAX)
BUS_REC(MIN)
BUS_REC(MAX)
BUS_REC(MIN)
Characteristic
(28)
/ (2 x t
/ (2 x t
/ (2 x t
/ (2 x t
(27)
(27)
DYNAMIC ELECTRICAL CHARACTERISTICS
BIT
BIT
BIT
BIT
(24)
), t
), t
), t
), t
(24)
,
BIT
BIT
BIT
(26)
BIT
,
(25)
IL
= 96μs, V
= 50μs, V
= 96μs, V
= 50μs, V
or V
IH
and 50% of RXD signal.
SUP
SUP
SUP
SUP
= 7.0V..18V
= 7.0V..18V
= 7.6V..18V
= 7.6V..18V
A
V
= 25°C under nominal conditions, unless otherwise noted.
SUP
t
t
t
t
t
t
t
t
t
DOM-
DOM-
REC-
REC-
Symbol
DOM-
DOM-
PROPWL
REC-
REC-
SR
t
16V, - 40°C
t
R-SYM
WAKE
Figure 9
t
t
D1
D2
D3
D4
RH
RL
FAST
MAX
MAX
MAX
MAX
MIN
MIN
MIN
MIN
and
DYNAMIC ELECTRICAL CHARACTERISTICS
Figure
T
0.396
0.417
Min
- 2.0
J
30
125°C, unless otherwise noted.
8, page 18. In Sleep mode, the V
ELECTRICAL CHARACTERISTICS
Typ
3.5
3.5
20
50
20
0.581
0.590
Max
100
100
100
100
150
6.0
6.0
2.0
50
50
50
50
908E622
V / μs
Unit
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
DD
15

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