KM681000 SAMSUNG [Samsung semiconductor], KM681000 Datasheet - Page 5

• Manufacturer Part Number: KM681000
• Description: 128K x8 bit Low Power CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

KM681000B Family
TEST CONDITIONS
PARAMETER LIST FOR EACH SPEED BIN
Read
Write
KM681000BLE/LE-L
KM681000BLI/LI-L
KM681000BL/L-L
Product Family
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Parameter List
(2. Temperature and Vcc Conditions)
Temperature
-25~85 ¡É
-40~85 ¡É
0~70 ¡É
t
t
CO1,
t
Power Supply(Vcc)
HZ1,
LZ1,
Symbol
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
OHZ
t
t
OLZ
t
OW
WC
CW
AW
WP
WR
DW
RC
OE
OH
DH
AA
AS
5.0V ¡¾ 10%
5.0V ¡¾ 10%
5.0V ¡¾ 10%
t
t
t
CO2
LZ2
HZ2
Min
55
10
10
55
45
45
40
25
5
0
0
0
0
0
0
5
-
-
-
55ns
Max
55
55
25
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Speed Bin
70
10
10
70
60
60
50
30
Speed Bins
5
0
0
0
0
0
0
5
-
-
-
70/100ns
70/100ns
55/70ns
70ns
Max
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
PRELIMINARY
Min
100
100
10
10
80
80
60
40
5
0
0
0
0
0
0
5
CMOS SRAM
-
-
-
100ns
Commercial
Comments
Extended
Industrial
Max
100
100
50
30
30
30
-
-
-
-
-
-
-
-
-
-
-
-
-
Revision 0.3
April 1996
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns