SLX-2043 STANFORD [Stanford Microdevices], SLX-2043 Datasheet - Page 2

• Manufacturer Part Number: SLX-2043
• Description: 1700-2500 MHz High Linearity Low Noise Amplifier Module
• Manufacturer: STANFORD [Stanford Microdevices]

Absolute Maximum Ratings
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Supply Current
Device Voltage
Operating Temperature
Maximum Input Power
Storage Temperature Range
Operating Junction Temperature
Designators
Backside
Package
RF IN
Reference
Pin #
C1, C2
1
2
3
C3
C4
L1
Function
Parameters
RF Out/
RF In
GND
Bias
DC Blocking
AC Blocking
Decoupling
Decoupling
Function
microstrip
50 ohm
RF input pin. This pin requires the use of an
external DC blocking capacitor chosen for the fre-
quency of operation.
RF output and bias pin. Bias should be supplied
to this pin through an external RF choke inductor.
Because DC biasing is present on this pin, a DC
blocking capacitor should be used in most appli-
cations (see application schematic). The supply
side of the bias network should be well bypassed.
Connection to ground. For best performance use
via holes as shown in recommended PCB layout
to reduce inductance and to provide adequate
thermal path.
0.01 uF
220 pF
47 nH
Value
10 pF
-65 to +150
Description
-40 to +85
Value
+150
150
+17
5.0
C1
C4
Phone: (800) SMI-MMIC
1
Unit
dBm
SLX-2043
mA
ºC
ºC
ºC
V
2
Package Backside
Operation of this device above any one of these
parameters may cause permanent damage.
Bias conditions should also satisfy the following
expression: I
2
Application Schematic
C3
RF In
C2
L1
D
V
D
(max) < (T
Device Schematic
Advanced Data Sheet
J
microstrip
- T
http://www.stanfordmicro.com
50 ohm
OP
)/R
V
D
th
, j-l
03/28/01 rev 8.0
RF Out/
DC In
RF OUT