AT42085 HP [Agilent(Hewlett-Packard)], AT42085 Datasheet

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AT42085

Manufacturer Part Number
AT42085
Description
Up to 6 GHz Medium Power Up to 6 GHz Medium Power
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet
1.AT42085.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
AT42085
Quantity:
3 593
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
• High Output Power:
• High Gain at 1 dB
• Low Noise Figure:
• High Gain-Bandwidth
• Low Cost Plastic Package
Description
Hewlett-Packard’s AT-42085 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42085 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
20.5 dBm Typical P
Compression:
14.0 dB Typical G
2.0 dB Typical NF
Product: 8.0 GHz Typical f
1 dB
O
1 dB
at 2.0 GHz
at 2.0 GHz
at 2.0 GHz
T
The 20 emitter finger interdigi-
tated geometry yields a medium
sized transistor with impedances
that are easy to match for low
noise and medium power applica-
tions. Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
device easy to use as a low noise
amplifier.
The AT-42085 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
T
Self-Aligned-Transistor
up to 1 GHz, makes this
4-169
AT-42085
85 Plastic Package
5965-8913E

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AT42085 Summary of contents

Page 1

GHz Medium Power Silicon Bipolar Transistor Technical Data Features • High Output Power: 20.5 dBm Typical P at 2.0 GHz 1 dB • High Gain Compression: 14.0 dB Typical G at 2.0 GHz 1 ...

Page 2

AT-42085 Absolute Maximum Ratings Symbol Parameter V Emitter-Base Voltage EBO V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO I Collector Current C [2,3] P Power Dissipation T T Junction Temperature j T Storage Temperature STG Electrical Specifications, T Symbol Parameters ...

Page 3

AT-42085 Typical Performance 1.0 GHz 16 2.0 GHz 12 8 4.0 GHz (mA) C Figure 1. Insertion Power Gain vs. Collector Current and Frequency ...

Page 4

AT-42085 Typical Scattering Parameters, Common Emitter Freq GHz Mag. Ang. 0.1 .72 -50 0.5 .66 -139 1.0 .65 -168 1.5 .65 175 2.0 .65 163 2.5 .66 ...

Page 5

Plastic Package Dimensions .020 .51 EMITTER 4 0.143 3. BASE COLLECTOR Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances EMITTER 2 in .xxx = mm .xx = .085 2.15 .060 .010 1.52 .25 .006 ...

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