ADG709 AD [Analog Devices], ADG709 Datasheet - Page 4

• Manufacturer Part Number: ADG709
• Description: CMOS, 3 ohm Low Voltage 4-/8-Channel Multiplexers
• Manufacturer: AD [Analog Devices]

ADG708/ADG709–SPECIFICATIONS
DUAL SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature range is as follows: B and C Versions: –40 C to +85 C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On-Resistance (R
On-Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
Break-Before-Make Time Delay, t
t
t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
C
C
I
I
TRANSITION
ON
OFF
DD
SS
IN
S
D
D
Channels ( R
I
ADG708
ADG709
ADG708
ADG709
(OFF)
, C
INL
(EN)
, Digital Input Capacitance
(OFF)
(EN)
S
or I
(ON)
INH
ON
ON
)
(V
)
D
INL
DD
INH
S
D
(OFF)
(OFF)
, I
= +3 V
FLAT(ON)
S
(ON)
2
D
)
10%, V
+25 C to +85 C
2.5
4.5
0.6
0.005
2
14
8
14
8
–60
–80
–60
–80
55
13
85
42
96
48
0.001
0.001
0.01
0.01
0.01
3
B Version
SS
= –3 V
–40 C
V
5
0.4
0.8
1.0
2.0
0.4
25
1
25
15
1.0
1.0
20
20
20
0.1
SS
to V
DD
10%, GND = 0 V)
+25 C to +85 C
2.5
4.5
0.6
0.005
2
14
8
14
8
–60
–80
–60
–80
55
13
85
42
96
48
0.001
0.001
0.01
0.1
0.01
0.1
0.01
0.1
3
C Version
–4–
–40 C
V
5
0.4
0.8
1.0
2.0
0.4
25
1
25
15
`
1.0
1.0
0.3
0.75
0.75
0.1
SS
1
to V
DD
Unit
V
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
pF typ
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ R
pF typ
pF typ
pF typ
pF typ
pF typ
A typ
A max
A typ
A max
A typ
A max
typ
max
typ
max
typ
max
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
V
R
V
R
V
R
V
R
V
V
Test Circuit 8
R
R
Test Circuit 9
R
R
Test Circuit 10
V
Digital Inputs = 0 V or 3.3 V
V
Digital Inputs = 0 V or 3.3 V
S
S
S
DD
S
S
S
IN
L
S
L
S
L
S
L
S
S
L
L
L
L
L
DD
SS
= +2.25 V/–1.25 V, V
= +2.25 V/–1.25 V, V
= V
= V
= V
= V
= 1.5 V/0 V, Test Circuit 5
= 1.5 V, Test Circuit 6
= 1.5 V, Test Circuit 7
= 1.5 V, Test Circuit 7
= 0 V, R
= 300 , C
= 300 , C
= 300 , C
= 300 , C
= 50 , C
= 50 , C
= 50 , C
= 50 , C
= 50 , C
= –3.3 V
= V
= +3.3 V, V
= 3.3 V
SS
SS
SS
D
INL
= +2.25 V/–1.25 V, Test Circuit 4
to V
to V
to V
or V
S
= 0 , C
L
L
L
L
L
DD
DD
DD
L
L
L
L
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz;
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz;
= 5 pF, Test Circuit 9
INH
, I
, I
, I
= 35 pF, Test Circuit 5
= 35 pF
= 35 pF
= 35 pF
SS
DS
DS
DS
= –3.3 V
= 10 mA;
= 10 mA
= 10 mA
L
= 1 nF;
D
D
= –1.25 V/+2.25 V;
= –1.25 V/+2.25 V;
REV. 0