ADG620 AD [Analog Devices], ADG620 Datasheet - Page 3

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ADG620

Manufacturer Part Number
ADG620
Description
CMOS +-5 V/ +5V 4 OHM SINGLE SPDT SWITCHES
Manufacturer
AD [Analog Devices]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ADG620BRMZ
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
REV. 0
SINGLE SUPPLY
Temperature ranges are as follows: B Version, –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
ADG619
ADG620
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
I
DD
IN
t
t
Break-Before-Make Time Delay, t
t
t
Make-Before-Break Time Delay, t
S
D
Channels (∆R
I
OFF
OFF
ON
ON
INL
(OFF)
, C
, Digital Input Capacitance
S
or I
(ON)
INH
ON
ON
)
)
1
INL
INH
S
D
(OFF)
, I
(V
FLAT(ON)
S
DD
(ON)
= +5 V
2
)
BBM
MBB
10%, V
+25 C
7
ß10
0.8
1
0.5
± 0.01
± 0.25
± 0.01
± 0.25
0.005
2
120
220
50
75
70
50
85
210
340
170
6
–67
–67
190
25
95
0.001
SS
= 0 V, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)
B Version
–40 C to
+85 C
0 V to V
12.5
1.2
0.5
0.8
± 1
± 1
2.4
0.8
± 0.1
280
110
10
110
420
10
1.0
–3–
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
V
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
R
V
R
V
R
V
V
Test Circuit 7
R
Test Circuit 8
R
Test Circuit 10
R
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5.5 V
DD
S
S
S
DD
S
S
IN
S
S
S1
S
S
S
S
DD
L
L
L
L
L
L
L
L
L
= 0 V to 4.5 V, I
= 0 V to 4.5 V, I
= 1.5 V to 3.3 V, I
= 1 V/4.5 V, V
= V
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 6
= 0 V, R
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= 4.5 V, V
= 5.5 V
= 5.5 V
D
INL
S2
= 1 V/4.5 V,
= 3.3 V, Test Circuit 5
or V
S
= 0 Ω, C
L
L
L
L
L
L
L
L
L
= 5 pF, f = 1 MHz,
= 5 pF, f = 1 MHz,
= 5 pF, Test Circuit 9
SS
INH
= 35 pF
= 35 pF
= 35 pF,
= 35 pF
= 35 pF
= 35 pF
ADG619/ADG620
= 0 V
D
S
S
= 4.5 V/1 V,
= –10 mA,
= –10 mA
S
L
= –10 mA
= 1 nF,

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