ADG412 AD [Analog Devices], ADG412 Datasheet - Page 4

no-image

ADG412

Manufacturer Part Number
ADG412
Description
LC2MOS Precision Quad SPST Switches
Manufacturer
AD [Analog Devices]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ADG412BN
Manufacturer:
NS
Quantity:
6 261
Part Number:
ADG412BN
Manufacturer:
AD
Quantity:
2 715
Part Number:
ADG412BN
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
ADG412BR
Manufacturer:
AD
Quantity:
15
Part Number:
ADG412BR
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
ADG412BR-REEL
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
ADG412BRU
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
ADG412BRUZ
Manufacturer:
ADI
Quantity:
119
Part Number:
ADG412BRUZ
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
ADG412BRZ
Manufacturer:
ADI
Quantity:
8 000
Part Number:
ADG412BRZ-REEL7
Manufacturer:
ATMEL
Quantity:
561
Part Number:
ADG412TQ
Manufacturer:
AD
Quantity:
5 510
ADG411/ADG412/ADG413
ABSOLUTE MAXIMUM RATINGS
(T
V
V
V
V
Analog, Digital Inputs
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Storage Temperature Range . . . . . . . . . . . . . –65 C to +150 C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150 C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
TSSOP Package, Power Dissipation . . . . . . . . . . . . . . 450 mW
NOTES
1
2
Model
ADG411BN
ADG411BR
ADG411TQ
ADG411BRU
ADG412BN
ADG412BR
ADG412TQ
ADG413BN
ADG413BR
NOTES
1
2
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG411/ADG412/ADG413 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause perma-
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
To order MIL-STD-883, Class B processed parts, add /883B to T grade part
N = Plastic DIP; R = 0.15" Small Outline IC (SOIC); RU= Thin Shrink Small
numbers.
Outline (TSSOP); Q = Cerdip.
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
limited to the maximum ratings given.
DD
DD
SS
L
A
Industrial (B Version) . . . . . . . . . . . . . . . . . –40 C to +85 C
Extended (T Version) . . . . . . . . . . . . . . . . –55 C to +125 C
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300 C
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260 C
Lead Temperature, Soldering
= +25 C unless otherwise noted)
to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
JA
JA
JA
JA
JC
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215 C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220 C
to V
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 76 C/W
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 117 C/W
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 77 C/W
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 115 C/W
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 35 C/W
l
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
Temperature Range
–40 C to +85 C
–40 C to +85 C
–55 C to +125 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–55 C to +125 C
–40 C to +85 C
–40 C to +85 C
ORDERING GUIDE
2
. . . . . . . . . . . V
30 mA, Whichever Occurs First
1
SS
–2 V to V
Package Option
N-16
R-16A
Q-16
RU-16
N-16
R-16A
Q-16
N-16
R-16A
DD
DD
+ 0.3 V
+2 V or
2
–4–
V
V
V
GND
S
D
IN
R
I
I
I
V
C
C
C
t
t
t
Crosstalk
Off Isolation
Charge
Injection
ON
OFF
D
S
D
D
DD
SS
L
ON
D
S
D
D
, I
(OFF)
(OFF)
, C
(OFF)
(V
(OFF)
S
S
(ON)
S
)
(ON)
Most positive power supply potential.
Most negative power supply potential in dual
supplies. In single supply applications, it may
be connected to GND.
Logic power supply (+5 V).
Ground (0 V) reference.
Source terminal. May be an input or output.
Drain terminal. May be an input or output.
Logic control input.
Ohmic resistance between D and S.
Source leakage current with the switch “OFF.”
Drain leakage current with the switch “OFF.”
Channel leakage current with the switch “ON.”
Analog voltage on terminals D, S.
“OFF” switch source capacitance.
“OFF” switch drain capacitance.
“ON” switch capacitance.
Delay between applying the digital control
input and the output switching on.
Delay between applying the digital control
input and the output switching off.
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another.
A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.
A measure of unwanted signal coupling
through an “OFF” switch.
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
PIN CONFIGURATION
GND
V
IN1
IN4
D1
D4
S1
S4
SS
TERMINOLOGY
1
2
3
4
5
6
7
8
(DIP/SOIC)
(Not to Scale)
TOP VIEW
ADG411
ADG412
ADG413
WARNING!
16
15
14
13
12
11
10
9
IN2
D2
S2
V
V
S3
D3
IN3
DD
L
ESD SENSITIVE DEVICE
REV. A

Related parts for ADG412